Ihame ryakazi rya N-umuyoboro wogutezimbere MOSFET

(1) Ingaruka yo kugenzura vGS kuri ID n'umuyoboro

① Urubanza rwa vGS = 0

Birashobora kugaragara ko hariho ibice bibiri byinyuma-inyuma PN ihuza imiyoboro ya d d nisoko s yo kuzamura-uburyoBYINSHI.

Iyo irembo-isoko ya voltage vGS = 0, kabone niyo hongerwamo imiyoboro-yamazi ya voltage vDS, kandi tutitaye kuri polarite ya vDS, burigihe hariho ihuriro rya PN muburyo bubogamye.Nta muyoboro uyobora hagati y'amazi n'inkomoko, bityo imiyoboro y'amazi ID≈0 muri iki gihe.

Urubanza rwa vGS> 0

Niba vGS> 0, umurima wamashanyarazi ukorwa murwego rwa SiO2 rukingira hagati y irembo na substrate.Icyerekezo cyumuriro wamashanyarazi ni perpendicular kumurima wamashanyarazi werekeza kumarembo ugana substrate hejuru yubuso bwa semiconductor.Uyu murima w'amashanyarazi wirukana umwobo kandi ukurura electron.Kwanga umwobo: Imyobo iri mu bwoko bwa P-substrate hafi y irembo irasubizwa inyuma, hasigara ion zakira zitimukanwa (ion negatif) kugirango zibe igabanuka.Kurura electroni: electroni (abatwara bake) muburyo bwa P-subrate ikurura hejuru yubutaka.

(2) Gushiraho umuyoboro uyobora:

Iyo agaciro ka vGS ari nto kandi ubushobozi bwo gukurura electroni ntabwo bukomeye, haracyari umuyoboro uyobora hagati yumuyoboro nisoko.Mugihe vGS yiyongera, electron nyinshi zikururwa hejuru yubuso bwa P.Iyo vGS igeze ku gaciro runaka, izo electron zikora N-ubwoko bworoshye bwa N hejuru yubuso bwa P substrate hafi y irembo kandi bigahuzwa n'uturere tubiri twa N +, bigakora umuyoboro wa N wo hagati ya N n'amazi.Ubwoko bwimikorere yabyo butandukanye nubwa P substrate, kubwibyo nanone byitwa inversion layer.VGS nini nini, imbaraga zumuriro wamashanyarazi zikora hejuru yubuso bwa semiconductor nini, niko electron nyinshi zikururwa hejuru yubuso bwa P substrate, umuyoboro mwinshi ugenda uba mwinshi, kandi nuyoboro muke ukaba muto.Irembo-isoko ya voltage iyo umuyoboro utangiye gukora witwa gufungura-voltage, ihagarariwe na VT.