Iyi ni ipakiBYINSHIpyroelectric infrared sensor. Urukiramende ni urukiramende. G pin nubutaka bwubutaka, D pin numuyoboro wimbere wa MOSFET, naho S pin nisoko ya MOSFET yimbere. Mumuzunguruko, G ihujwe nubutaka, D ihujwe no gutanga amashanyarazi meza, ibimenyetso bya infragre byinjira mumadirishya, naho ibimenyetso byamashanyarazi biva muri S.
Irembo ry'urubanza G.
Umushoferi wa MOS ahanini akina uruhare rwo gushiraho no kuzamura ibinyabiziga: Niba ibimenyetso bya G byerekana ibimenyetso byaBYINSHIntabwo ihanamye bihagije, bizatera imbaraga nyinshi zo gutakaza ingufu mugihe cyo guhinduranya. Ingaruka yacyo ni ukugabanya imikorere yumuzunguruko. MOSFET izaba ifite umuriro mwinshi kandi yangiritse byoroshye nubushyuhe. Hariho ubushobozi runaka hagati ya MOSFETGS. , niba ibimenyetso bya G ibimenyetso byo gutwara bidahagije, bizagira ingaruka zikomeye kumwanya wo gusimbuka.
Umuyoboro mugufi GS pole, hitamo urwego R × 1 rwa multimeter, uhuze ikizamini cyirabura kiganisha kuri S pole, naho ikizamini gitukura kiganisha kuri D pole. Kurwanya bigomba kuba bike Ω kugeza kurenza icumi Ω. Niba bigaragaye ko kurwanya pin runaka hamwe na pin yayo ebyiri bitagira umupaka, kandi biracyafite iherezo nyuma yo guhana ibizamini, byemejwe ko iyi pin ari G pole, kuko ikingiwe mubindi byuma bibiri.
Menya inkomoko S hanyuma ukure D.
Shyira multimeter kuri R × 1k hanyuma upime guhangana hagati yimipira itatu. Koresha uburyo bwo guhanahana ikizamini cyo gupima gupima inshuro ebyiri. Rimwe rifite agaciro gake (muri rusange ibihumbi bike Ω kugeza ku bihumbi icumi Ω) ni ukurwanya imbere. Muri iki gihe, ikizamini cyirabura kiyobora ni S pole kandi ikizamini gitukura cyahujwe na D pole. Kubera ibizamini bitandukanye, ibipimo bya RDS (kuri) byapimwe birenze agaciro gasanzwe katanzwe mubitabo.
IbyerekeyeBYINSHI
Transistor ifite umuyoboro wa N-buryo rero yitwa N-umuyoboroBYINSHI, cyangwaNMOS. P-umuyoboro MOS (PMOS) FET nayo irahari, ikaba PMOSFET igizwe na N-BACKGATE yoroheje yoroheje N-BACKGATE hamwe na P-nkomoko na drain.
Hatitawe kuri N-bwoko cyangwa P-MOSFET, ihame ryakazi ni bimwe. MOSFET igenzura ikigezweho kumuyoboro wibisohoka na voltage ikoreshwa kumarembo yinjira. MOSFET ni igikoresho kigenzurwa na voltage. Igenzura ibiranga igikoresho binyuze muri voltage ikoreshwa kumarembo. Ntabwo itera ingaruka zo kubika amafaranga yatewe nubu shingiro mugihe transistor ikoreshwa muguhindura. Kubwibyo, muguhindura porogaramu,MOSFETSigomba guhinduka vuba kuruta transistor.
FET nayo ibona izina ryayo kuberako iyinjizwa ryayo (ryitwa irembo) rigira ingaruka kumuyoboro unyura muri transistor mugushinga umurima w'amashanyarazi kumurongo. Mubyukuri, ntamashanyarazi atembera muri iyi insulator, bityo GATE yumuyoboro wa FET ni nto cyane.
FET ikunze gukoreshwa ikoresha urwego ruto rwa dioxyde ya silicon nka insulator munsi ya GATE.
Ubu bwoko bwa transistor bwitwa tristoriste yicyuma (MOS), cyangwa, icyuma cya oxyde semiconductor field effect transistor (MOSFET). Kuberako MOSFETs ari ntoya kandi ikora neza, basimbuye bipolar transistors mubikorwa byinshi.
Igihe cyo kohereza: Ugushyingo-10-2023
