Gusobanukirwa amahame yimikorere ya MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) ningirakamaro mugukoresha neza ibyo bikoresho bya elegitoroniki bikora neza. MOSFETs nibintu byingirakamaro mubikoresho bya elegitoroniki, kandi kubisobanukirwa ni ngombwa kubabikora.
Mubimenyerezo, hari ababikora badashobora gushima byimazeyo imikorere yihariye ya MOSFETs mugihe babisabye. Nubwo bimeze bityo ariko, mugusobanukirwa amahame yakazi ya MOSFETs mubikoresho bya elegitoronike ninshingano zabyo, umuntu arashobora guhitamo ingamba MOSFET ibereye, ukurikije imiterere yihariye n'ibiranga ibicuruzwa. Ubu buryo butezimbere imikorere yibicuruzwa, bishimangira irushanwa ryayo ku isoko.
WINSOK SOT-23-3 paketi MOSFET
Amahame y'akazi menshi
Iyo amarembo-isoko ya voltage (VGS) ya MOSFET ari zeru, kabone niyo haba hashyizweho ingufu za voltage-soko (VDS), burigihe habaho ihuriro rya PN muburyo bubogamye, bikavamo nta muyoboro uyobora (kandi nta nubu) hagati imiyoboro n'inkomoko ya MOSFET. Muriyi leta, imiyoboro y'amazi (ID) ya MOSFET ni zeru. Gukoresha voltage nziza hagati y irembo nisoko (VGS> 0) ikora umurima wamashanyarazi murwego rwa insuline ya SiO2 hagati y irembo rya MOSFET na substrate ya silicon, yerekejwe kumarembo yerekeza kuri P-silicon substrate. Urebye ko igice cya oxyde kirimo gukingirwa, voltage ikoreshwa kumarembo, VGS, ntishobora kubyara umuyoboro muri MOSFET. Ahubwo, ikora capacitor hejuru ya oxyde.
Mugihe VGS yiyongera buhoro buhoro, capacitor irishyuza, ikora umurima wamashanyarazi. Bikururwa na voltage nziza ku irembo, electron nyinshi zegeranya kurundi ruhande rwa capacitor, zikora umuyoboro wa N wo mu bwoko bwa N uva mumazi ugana isoko muri MOSFET. Iyo VGS irenze igipimo cyumubyigano wa VT (mubisanzwe hafi ya 2V), N-umuyoboro wa MOSFET ikora, itangiza urujya n'uruza rw'indangamuntu. Irembo-isoko ya voltage aho umuyoboro utangirira kwerekanwa nkumubyigano wa voltage VT. Mugucunga ubunini bwa VGS, hanyuma rero amashanyarazi, ubunini bwindangamuntu ya drake muri MOSFET irashobora guhindurwa.
WINSOK DFN5x6-8 paketi MOSFET
MOSFET Porogaramu
MOSFET izwi cyane kubera uburyo bwiza bwo guhinduranya ibintu, biganisha ku gukoreshwa kwinshi mu mizunguruko isaba ibyuma bya elegitoronike, nk'ibikoresho bitanga amashanyarazi. Mubisabwa na voltage nkeya ukoresheje amashanyarazi ya 5V, gukoresha imiterere gakondo bivamo kugabanuka kumashanyarazi hejuru ya emitter ya bipolar ihuza transistor (hafi 0.7V), hasigara 4.3V gusa kuri voltage yanyuma ikoreshwa kumarembo ya MOSFET. Mubihe nkibi, guhitamo MOSFET hamwe na voltage yumuryango wizina ya 4.5V bizana ingaruka zimwe. Izi mbogamizi zigaragarira no mubikorwa birimo 3V cyangwa ibindi bitanga ingufu nkeya.
Igihe cyo kohereza: Ukwakira-27-2023
