Amashanyarazi ya semiconductor akoreshwa cyane mu nganda, mu gukoresha, mu gisirikare no mu zindi nzego, kandi afite umwanya wo hejuru. Reka turebe ishusho rusange yibikoresho byamashanyarazi uhereye kumashusho:
Ibikoresho byamashanyarazi birashobora kugabanywa mubwoko bwuzuye, ubwoko bugenzurwa nigice cyubwoko butagenzurwa ukurikije urwego rwo kugenzura ibimenyetso byumuzunguruko. Cyangwa ukurikije ibimenyetso byerekana ibimenyetso byumuzunguruko, birashobora kugabanywa mubwoko bwa voltage, ubwoko bwimodoka, nibindi.
| Ibyiciro | Ubwoko | Ibikoresho byihariye bya semiconductor |
| Kugenzura ibimenyetso byamashanyarazi | Ubwoko bugenzurwa na Semi | SCR |
| Igenzura ryuzuye | GTO 、 GTR ， MOSFET 、 IGBT | |
| Ntibishobora | Imbaraga Diode | |
| Gutwara ibimenyetso byerekana ibimenyetso | Ubwoko bwa voltage | IGBT 、 MOSFET 、 SITH |
| Ubwoko bwubu | SCR 、 GTO 、 GTR | |
| Ikimenyetso gifatika | Ubwoko bwa pulse | SCR 、 GTO |
| Ubwoko bwa elegitoronike | GTR 、 MOSFET 、 IGBT | |
| Ibihe bitwara electroni zitwara | igikoresho cya bipolar | Imbaraga Diode 、 SCR 、 GTO 、 GTR 、 BSIT 、 BJT |
| Igikoresho cya unipolar | MOSFET 、 YICARA | |
| Igikoresho | MCT, IGBT, SITH na IGCT |
Ibikoresho bitandukanye bya semiconductor bifite ibintu bitandukanye nka voltage, ubushobozi bwubu, ubushobozi bwa impedance, nubunini. Mugukoresha nyabyo, ibikoresho bikwiye bigomba gutoranywa ukurikije imirima itandukanye nibikenewe.
Inganda za semiconductor zanyuze mu bisekuru bitatu byimpinduka zifatika kuva yavuka. Kugeza ubu, ibikoresho bya mbere bya semiconductor byerekanwe na Si biracyakoreshwa cyane mubijyanye nimbaraga za semiconductor.
| Ibikoresho bya Semiconductor | Bandgap (eV) | Ingingo yo gushonga (K) | Porogaramu nyamukuru | |
| Igisekuru cya 1 ibikoresho bya semiconductor | Ge | 1.1 | 1221 | Umuvuduko muke, inshuro nke, transistors yingufu ziciriritse, fotodetekeri |
| Igisekuru cya 2 ibikoresho bya semiconductor | Si | 0.7 | 1687 | |
| Igisekuru cya 3 ibikoresho bya semiconductor | GaAs | 1.4 | 1511 | Microwave, milimetero ibikoresho byumuyaga, ibikoresho bitanga urumuri |
| SiC | 3.05 | 2826 | 1. Ubushyuhe bwo hejuru, inshuro nyinshi, ibikoresho birwanya imirasire 2. Ubururu, urwego, violet itanga urumuri rwa diode, lazeri ya semiconductor | |
| GaN | 3.4 | 1973 | ||
| AIN | 6.2 | 2470 | ||
| C | 5.5 | 00 3800 | ||
| ZnO | 3.37 | 2248 | ||
Vuga muri make ibiranga ibikoresho bigenzurwa kandi bigenzurwa byuzuye:
| Ubwoko bwibikoresho | SCR | GTR | BYINSHI | IGBT |
| Ubwoko bwo kugenzura | Imbarutso | Igenzura ryubu | kugenzura imbaraga | firime |
| umurongo wo kwifungisha | Guhagarika ingendo | igikoresho cyo kwifungisha | igikoresho cyo kwifungisha | igikoresho cyo kwifungisha |
| inshuro zakazi | ＜ 1khz | ＜ 30khz | 20khz-Mhz | K 40khz |
| Imbaraga zo gutwara | nto | binini | nto | nto |
| Guhindura igihombo | binini | binini | binini | binini |
| igihombo | nto | nto | binini | nto |
| Umuvuduko nurwego rwubu | 最大 | binini | ntarengwa | byinshi |
| Porogaramu isanzwe | Ubushyuhe bwo hagati bwo gushyushya | UPS inshuro nyinshi | guhinduranya amashanyarazi | UPS inshuro nyinshi |
| igiciro | hasi | munsi | hagati | Ihenze cyane |
| Ingaruka yo guhindura imyitwarire | kugira | kugira | nta na kimwe | kugira |
Menya MOSFETS
MOSFET ifite impedance nyinshi yinjiza, urusaku ruke, hamwe nubushyuhe bwiza bwumuriro; ifite uburyo bworoshye bwo gukora hamwe nimirasire ikomeye, kuburyo isanzwe ikoreshwa mumashanyarazi ya amplifier cyangwa guhinduranya imirongo;
.
(2) Ukurikije inzira zitandukanye, igabanijwemo TrenchMOS: umwobo MOSFET, cyane cyane mumashanyarazi make muri 100V; SGT (Irembo rya Split) MOSFET: gutandukanya amarembo MOSFET, cyane cyane mumashanyarazi yo hagati na voltage nto muri 200V; SJ MOSFET: super ihuza MOSFET, cyane cyane mumashanyarazi ya High voltage 600-800V;
Mugihe cyo guhinduranya amashanyarazi, nkumuzunguruko ufunguye-imiyoboro, imiyoboro ihujwe nu mutwaro udahwitse, ibyo bita gufungura-imiyoboro. Mumuzunguruko-ufunguye, kabone niyo imbaraga zingana zingana gute umutwaro uhujwe, umutwaro wumuzigo urashobora gufungura no kuzimya. Nibikoresho byiza byo kugereranya. Iri ni ihame rya MOSFET nkigikoresho cyo guhinduranya.
Kubijyanye nigabana ryisoko, MOSFETs hafi ya yose yibanze mumaboko yinganda zikomeye. Muri bo, Infineon yaguze IR (American International Rectifier Company) mu 2015 maze aba umuyobozi w'inganda. KURI Semiconductor kandi yarangije kugura Fairicon Semiconductor muri Nzeri 2016., Umugabane w isoko wazamutse ujya kumwanya wa kabiri, hanyuma urutonde rwagurishijwe ni Renesas, Toshiba, IWC, ST, Vishay, Anshi, Magna, nibindi.;
Ibiranga MOSFET yibiranga bigabanijwe mubice byinshi: Abanyamerika, Abayapani na Koreya.
Urukurikirane rw'Abanyamerika: Infineon, IR, Fairchild, KURI Semiconductor, ST, TI, PI, AOS, nibindi.;
Ikiyapani: Toshiba, Renesas, ROHM, nibindi.;
Urukurikirane rw'Abanyakoreya: Magna, KEC, AUK, Morina Hiroshi, Shinan, KIA
Ibyiciro bya MOSFET
Ukurikije uburyo yashyizwe ku kibaho cya PCB, hari ubwoko bubiri bwingenzi bwibikoresho bya MOSFET: gucomeka (Binyuze mu mwobo) no hejuru yubuso (Umusozi wa Surface). ?
Ubwoko bwa plug-in bisobanura ko pin ya MOSFET inyura mumyobo yububiko bwa PCB hanyuma igasudwa kubuyobozi bwa PCB. Amapaki asanzwe arimo: ibice bibiri mumurongo (DIP), urutonde rwinzibacyuho (TO), na pin grid array pack (PGA).
Gucomeka
Kwishyiriraho hejuru niho amapine ya MOSFET hamwe nubushyuhe bwo gukwirakwiza ubushyuhe bisudira kuri padi hejuru yubuyobozi bwa PCB. Ububiko busanzwe bwububiko burimo: urutonde rwinzibacyuho (D-PAK), tristoriste ntoya (SOT), uduce duto duto (SOP), igipande cya kane (QFP), icyuma gitwara amashanyarazi (PLCC), nibindi.
Ububiko bwo hejuru
Hamwe niterambere ryikoranabuhanga, imbaho za PCB nkibibaho byababyeyi hamwe namakarita yubushushanyo kuri ubu ukoresha bike kandi bike ugacomeka mu bikoresho, kandi hakoreshwa ibikoresho byinshi byo hejuru.
1. Ibice bibiri kumurongo (DIP)
Porogaramu ya DIP ifite imirongo ibiri yipine kandi igomba kwinjizwa muri chip sock ifite imiterere ya DIP. Uburyo bukomokaho ni SDIP (Shrink DIP), ni ukugabanuka kabiri-kumurongo. Ubucucike bwa pin burenze inshuro 6 kurenza ubwa DIP.
Imiterere yububiko bwa DIP burimo: ibyiciro byinshi bya ceramic byombi-kumurongo DIP, umurongo umwe ceramic ceramic ebyiri-kumurongo DIP, ikariso ya DIP (harimo ubwoko bwa kashe ya ceramic yo gufunga, ubwoko bwa plasitike yububiko, ubwoko bwa ceramic buke-bushonga ibirahuri bifunga ubwoko) nibindi biranga ipaki ya DIP ni uko ishobora gutahura byoroshye binyuze mu mwobo wo gusudira ku mbaho za PCB kandi ikaba ihuza neza na kibaho.
Ariko, kubera ko aho bapakira hamwe nubunini bwayo ari binini, kandi pin yangiritse byoroshye mugihe cyo gucomeka no gucomeka, kwizerwa ni bibi. Muri icyo gihe, kubera uruhare rwibikorwa, umubare wibipapuro muri rusange ntushobora kurenga 100. Kubwibyo rero, murwego rwo guhuza cyane inganda za elegitoroniki, gupakira DIP byagiye biva mu mateka.
2. Urupapuro rwerekana Transistor (TO)
Ibikoresho byo gupakira hakiri kare, nka TO-3P, TO-247, TO-92, TO-92L, TO-220, TO-220F, TO-251, nibindi byose byapakiwe mubipfunyika.
TO-3P / 247: Nuburyo bukoreshwa muburyo bwo gupakira kuri voltage yo hagati-nini na MOSFETs-nini cyane. Igicuruzwa gifite ibiranga imbaraga nyinshi zihanganira voltage hamwe no guhangana cyane. ?
TO-220 / 220F: TO-220F ni paki yuzuye ya pulasitike, kandi nta mpamvu yo kongeramo pisine ikingira iyo uyishyize kuri radiator; TO-220 ifite urupapuro rwicyuma ruhujwe na pin yo hagati, kandi harasabwa padi izimya mugihe ushyira radiator. MOSFETs yiyi pake yuburyo bubiri ifite isura isa kandi irashobora gukoreshwa muburyo bumwe. ?
TO-251: Iki gicuruzwa gipfunyitse gikoreshwa cyane cyane kugabanya ibiciro no kugabanya ingano yibicuruzwa. Ikoreshwa cyane mubidukikije hamwe na voltage yo hagati hamwe numuyoboro mwinshi uri munsi ya 60A na voltage ndende munsi ya 7N. ?
TO-92: Iyi paki ikoreshwa gusa mumashanyarazi make MOSFET (iri munsi ya 10A, ihangane na voltage iri munsi ya 60V) na voltage nini 1N60 / 65, kugirango igabanye ibiciro.
Mu myaka yashize, kubera igiciro kinini cyo gusudira cyibikoresho byo gupakira no gukora ubushyuhe buke bwo gukwirakwiza ibicuruzwa byo mu bwoko bwa patch, ibisabwa ku isoko ry’imisozi byakomeje kwiyongera, ari nako byatumye habaho iterambere rya TO packaging hejuru yububiko.
TO-252 (nanone yitwa D-PAK) na TO-263 (D2PAK) byombi bipakira hejuru .。
Gupakira ibicuruzwa bigaragara
TO252 / D-PAK ni paki ya chip ya plastike, ikoreshwa muburyo bwo gupakira amashanyarazi ya transistor hamwe na voltage ituza chip. Nibimwe mubigezweho byingenzi. MOSFET ukoresheje ubu buryo bwo gupakira ifite electrode eshatu, irembo (G), imiyoboro (D), nisoko (S). Umuyoboro wamazi (D) waciwe kandi ntukoreshwa. Ahubwo, icyuma gishyushya inyuma gikoreshwa nkumuyoboro (D), usudira neza kuri PCB. Ku ruhande rumwe, ikoreshwa mu gusohora imigezi minini, naho kurundi ruhande, ikwirakwiza ubushyuhe binyuze muri PCB. Kubwibyo, hano hari PC eshatu D-PAK kuri PCB, kandi padi ya drain (D) nini. Ibipfunyika byihariye ni ibi bikurikira:
TO-252 / D-PAK ingano yubunini bwihariye
TO-263 ni variant ya TO-220. Yashizweho cyane cyane kunoza umusaruro no gukwirakwiza ubushyuhe. Ifasha cyane cyane amashanyarazi na voltage. Bikunze kugaragara cyane muri voltage yo hagati-MOSFETs iri munsi ya 150A no hejuru ya 30V. Usibye D2PAK (TO-263AB), ikubiyemo TO263-2, TO263-3, TO263-5, TO263-7 nubundi buryo, bugengwa na TO-263, cyane cyane bitewe numubare utandukanye nintera ya pin. .
TO-263 / D2PAK ingano yububikos
3. Pine ya grid grid pack (PGA)
Hano hari kwaduka kwinshi kwinshi imbere no hanze ya chip ya PGA (Pin Grid Array Package). Buri kare kare ya pin itondekanye intera runaka ikikije chip. Ukurikije umubare wibipapuro, birashobora gukorwa mubice 2 kugeza kuri 5. Mugihe cyo kwishyiriraho, shyiramo chip muri sock idasanzwe ya PGA. Ifite ibyiza byo gucomeka byoroshye no gucomeka no kwizerwa cyane, kandi irashobora guhuza numuyoboro mwinshi.
Imiterere ya pGA
Ibyinshi muri chip substrate ikozwe mubikoresho byubutaka, kandi bamwe bakoresha plastike idasanzwe nka substrate. Kubijyanye na tekinoroji, intera ya pin hagati ubusanzwe ni 2,54mm, kandi umubare wibipapuro uri hagati ya 64 na 447. Ikiranga ubu bwoko bwo gupakira ni uko agace gato gapakira (ingano), niko kugabanya ingufu zikoreshwa (imikorere) ) irashobora kwihanganira, naho ubundi. Ubu buryo bwo gupakira bwa chip bwari busanzwe muminsi yambere, kandi bwakoreshwaga cyane mugupakira ibicuruzwa bikoresha ingufu nyinshi nka CPU. Kurugero, Intel ya 80486 na Pentium byose bikoresha ubu buryo bwo gupakira; ntabwo byemewe cyane nabakora MOSFET.
4. Urupapuro ruto rwa Transistor Package (SOT)
SOT (Transistor Ntoya) bikomoka, bikaba bito mubunini kuruta TO paki.
Ubwoko bwa SOT
SOT23 nigikoresho gikoreshwa cyane muri tristoriste hamwe namababi atatu ameze nkibaba, arikusanya, emitter na base, byashyizwe kumpande zombi kuruhande rurerure rwibigize. Muri byo, emitter na base biri kuruhande rumwe. Biramenyerewe muri tristoriste nkeya, tristoriste yumurima hamwe na tristoriste ikomatanya hamwe numuyoboro urwanya. Bafite imbaraga nziza ariko kugurisha nabi. Ibigaragara bigaragara mu gishushanyo (a) hepfo.
SOT89 ifite pin eshatu ngufi zagabanijwe kuruhande rumwe rwa transistor. Kurundi ruhande ni icyuma gishyushya ibyuma bihujwe na base kugirango byongere ubushobozi bwo gukwirakwiza ubushyuhe. Birasanzwe muri silicon power surface mount transistors kandi irakwiriye kumashanyarazi yo hejuru. Ibigaragara bigaragara mu gishushanyo (b) hepfo. ?
SOT143 ifite amababa ane magufi ameze nkibaba, asohoka hanze kumpande zombi. Impera yagutse ya pin niyegeranya. Ubu bwoko bwa paki buramenyerewe muri tristoriste nyinshi, kandi isura yayo irerekanwa mumashusho (c) hepfo. ?
SOT252 ni transistor ifite imbaraga nyinshi ifite pin eshatu ziyobora kuruhande rumwe, naho pin yo hagati ni ngufi kandi niyegeranya. Ihuze kuri pin nini kurundi ruhande, nurupapuro rwumuringa rwo gukwirakwiza ubushyuhe, kandi isura yarwo nkuko bigaragara ku gishushanyo (d) hepfo.
Kugereranya ibipapuro bisanzwe bya SOT
Imirongo ine ya SOT-89 MOSFET ikoreshwa mubibaho. Ibisobanuro n'ibipimo byayo ni ibi bikurikira:
SOT-89 MOSFET yubunini bwihariye (unit: mm)
5. Urupapuro ruto ruto (SOP)
SOP. Amapine yakuwe kumpande zombi za pake muburyo bwikibaba cyinyoni (L imiterere). Ibikoresho ni plastiki na ceramic. Ibipimo byo gupakira SOP birimo SOP-8, SOP-16, SOP-20, SOP-28, nibindi. Umubare nyuma ya SOP werekana umubare wibipapuro. Amapaki menshi ya MOSFET SOP yemeza SOP-8 ibisobanuro. Inganda zikunze gusiba "P" ikayivuga muri make SO (Ntoya-Umurongo).
Ingano ya SOP-8
SO-8 yatunganijwe bwa mbere na Sosiyete ya PHILIP. Yapakiwe muri plastiki, ntigira ubushyuhe bwo hasi, kandi ifite ubushyuhe buke. Mubisanzwe bikoreshwa kuri MOSFETs nkeya. Nyuma, ibisobanuro bisanzwe nka TSOP (Thin Small Outline Package Package), VSOP (Package ntoya cyane), SSOP (Shrink SOP), TSSOP (Thin Shrink SOP), nibindi byaje kuvamo buhoro buhoro; muribo, TSOP na TSSOP bakunze gukoreshwa mubipfunyika MOSFET.
SOP yavuye mubisobanuro bisanzwe bikoreshwa kuri MOSFETs
6. Ibikoresho bya Quad Flat (QFP)
Intera iri hagati ya chip pin muri QFP (Plastike Quad Flat Package) ni nto cyane kandi pin ni nto cyane. Ubusanzwe ikoreshwa muminini minini cyangwa ultra-nini ihuriweho hamwe, kandi umubare wibipapuro muri rusange urenga 100. Chip ipakiwe murubu buryo igomba gukoresha tekinoroji ya SMT yo kugurisha kugirango igurishe chip kububiko. Ubu buryo bwo gupakira bufite ibintu bine byingenzi biranga: ① Birakwiye ko tekinoroji ya SMD yubaka kugirango ushyire insinga ku mbaho z'umuzunguruko wa PCB; Birakwiriye gukoreshwa cyane; ③ Biroroshye gukora kandi bifite ubwizerwe buhanitse; Ratio Ikigereranyo kiri hagati ya chip n'ahantu bapakira ni gito. Kimwe nuburyo bwo gupakira PGA, ubu buryo bwo gupakira buzinga chip mumapaki ya plastike kandi ntibushobora gukwirakwiza ubushyuhe butangwa mugihe chip ikora mugihe gikwiye. Irabuza kunoza imikorere ya MOSFET; kandi gupakira plastike ubwayo byongera ubunini bwigikoresho, kitujuje ibisabwa kugirango iterambere ryimyororokere mu cyerekezo cyo kuba cyoroshye, cyoroshye, kigufi, na gito. Mubyongeyeho, ubu bwoko bwo gupakira bushingiye kuri chip imwe, ifite ibibazo byumusaruro muke hamwe nigiciro kinini cyo gupakira. Kubwibyo, QFP irakwiriye cyane gukoreshwa muburyo bwa sisitemu ya LSI ya sisitemu nka microprocessors / amarembo yumurongo, kandi irakenewe no gupakira ibicuruzwa bya LSI bigereranywa nkibikorwa bya VTR no gutunganya ibimenyetso byamajwi.
7 pack Igice cya kane cyuzuye kitagira icyerekezo (QFN)
Porogaramu ya QFN (Quad Flat Ntabwo iyobowe na pack) ifite ibikoresho bya electrode kumpande zose. Kubera ko nta kiyobora, ahantu hashyirwa ni ntoya kuruta QFP kandi uburebure buri munsi ya QFP. Muri byo, QFN ceramic nayo yitwa LCC (Carless Chip Carrier), hamwe na plastike ya QFN ihendutse ukoresheje ibirahuri epoxy resin yacapishijwe ibikoresho fatizo byitwa plastike LCC, PCLC, P-LCC, nibindi. tekinoroji ifite ubunini buke, ubunini buto, na plastike nkibikoresho bifunga kashe. QFN ikoreshwa cyane muburyo bwo gupakira ibintu, kandi MOSFET ntabwo izakoreshwa. Ariko, kubera ko Intel yatanze umushoferi uhuriweho hamwe na MOSFET igisubizo, yatangije DrMOS mumapaki ya QFN-56 ("56" bivuga pin 56 zihuza inyuma ya chip).
Twabibutsa ko pake ya QFN ifite ibiyobora byo hanze bisa nkibikoresho bito bito cyane (TSSOP), ariko ubunini bwayo ni 62% ugereranije na TSSOP. Dukurikije imibare yerekana icyitegererezo cya QFN, imikorere yubushyuhe bwayo iri hejuru ya 55% ugereranije niyapakirwa rya TSSOP, naho amashanyarazi yayo (inductance na capacitance) ni 60% na 30% kurenza TSSOP. Ikibazo gikomeye ni uko bigoye gusana.
DrMOS muri QFN-56
Gakondo ya DC / DC ihinduranya imbaraga zitanga amashanyarazi ntishobora kuzuza ibisabwa kugirango ingufu zingana cyane, ntanubwo zishobora gukemura ikibazo cyingaruka za parasitike kumasoko menshi yo guhinduranya. Hamwe nudushya niterambere ryikoranabuhanga, byabaye impamo guhuza abashoferi na MOSFETs kugirango bubake moderi nyinshi. Ubu buryo bwo kwishyira hamwe burashobora kubika umwanya munini no kongera ingufu zumuriro. Binyuze mu gutezimbere abashoferi na MOSFETs, byabaye impamo. Imbaraga zingirakamaro hamwe nubuziranenge bwa DC bugezweho, iyi ni DrMOS ihuza umushoferi IC.
Renesas igisekuru cya 2 DrMOS
Porogaramu ya QFN-56 itayobora ituma DrMOS itera ubushyuhe buke cyane; hamwe nu mugozi wimbere hamwe nigishushanyo cyumuringa, insinga za PCB zo hanze zirashobora kugabanuka, bityo bikagabanya inductance hamwe nuburwanya. Byongeye kandi, umuyoboro wimbitse wa silicon MOSFET ikoreshwa irashobora kandi kugabanya cyane imiyoboro, guhinduranya no gutakaza amarembo; irahujwe nubugenzuzi butandukanye, irashobora kugera kuburyo butandukanye bwo gukora, kandi igashyigikira uburyo bwo guhindura icyiciro cya APS (Auto Phase Switching). Usibye gupakira QFN, ibipande byombi bitayobora (DFN) nuburyo bushya bwo gupakira ibikoresho bya elegitoronike byakoreshejwe cyane mubice bitandukanye bya ON Semiconductor. Ugereranije na QFN, DFN ifite electrode nkeya ziyobora hanze kumpande zombi.
8 rier Amashanyarazi ya Chipike Yayoboye (PLCC)
PLCC (Plastike Quad Flat Package) ifite imiterere ya kare kandi ni nto cyane kuruta DIP. Ifite amapine 32 hamwe na pin hirya no hino. Amapine ayobowe kuva kumpande enye za paki muburyo bwa T-shusho. Nibicuruzwa bya plastiki. Intera ya pin hagati ni 1.27mm, kandi umubare wibipapuro uri hagati ya 18 na 84. Amapine ya J ntabwo ahinduka kuburyo bworoshye kandi byoroshye gukora kuruta QFP, ariko kugenzura isura nyuma yo gusudira biragoye. Gupakira PLCC birakwiriye gushira insinga kuri PCB ukoresheje tekinoroji ya SMT yo hejuru. Ifite ibyiza byubunini buto kandi bwizewe. Gupakira kwa PLCC birasanzwe kandi bikoreshwa muri logique LSI, DLD (cyangwa progaramu ya logique igikoresho) nizindi nzitizi. Iyi fomu yo gupakira ikoreshwa kenshi mububiko bwa BIOS, ariko kuri ubu ntibisanzwe muri MOSFETs.
Encapsulation no kunoza imishinga yibanze
Bitewe niterambere ryiterambere rya voltage nkeya hamwe numuyoboro mwinshi muri CPU, MOSFETs zirasabwa kugira ingufu nini zisohoka, nkeya kurwanywa, kubyara ubushyuhe buke, ubushyuhe bwihuse, nubunini buto. Usibye kunoza tekinoroji yo gukora chip nibikorwa, abakora MOSFET nabo bakomeje kunoza tekinoroji yo gupakira. Hashingiwe ku guhuza nibisanzwe bigaragara, basaba imiterere mishya yo gupakira no kwandikisha amazina yikimenyetso kubipapuro bishya batezimbere.
1 、 RENESAS WPAK, LFPAK na LFPAK-I
WPAK ni pake yumuriro mwinshi wakozwe na Renesas. Mu kwigana pake ya D-PAK, chip ubushyuhe bwa chip irasudwa kububiko, kandi ubushyuhe bukwirakwizwa binyuze mububiko, kugirango pake ntoya WPAK nayo ishobora kugera kumasoko ya D-PAK. WPAK-D2 ipakira MOSFETs ebyiri zo hejuru / hasi kugirango ugabanye inductance.
Renesas WPAK ingano yububiko
LFPAK na LFPAK-I nibindi bibiri bito byerekana ibintu byakozwe na Renesas bihuye na SO-8. LFPAK isa na D-PAK, ariko ntoya kuruta D-PAK. LFPAK-i ishyira ubushyuhe hejuru kugirango igabanye ubushyuhe binyuze mumashanyarazi.
Renesas LFPAK na LFPAK-I paki
2. Vishay Imbaraga-PAK hamwe nububiko bwa Polar-PAK
Power-PAK nizina rya pake ya MOSFET yanditswe na Vishay Corporation. Imbaraga-PAK ikubiyemo ibintu bibiri byihariye: Imbaraga-PAK1212-8 na Power-PAK SO-8.
Vishay Imbaraga-PAK1212-8
Vishay Imbaraga-PAK SO-8
Polar PAK ni paki ntoya hamwe no gukwirakwiza ubushyuhe bubiri kandi ni bumwe muburyo bwa tekinoroji ya Vishay. Polar PAK ni kimwe nubusanzwe so-8. Ifite ingingo zo gutandukana kuruhande rwo hejuru no hepfo ya paki. Ntibyoroshye kwegeranya ubushyuhe imbere muri paki kandi birashobora kongera ubucucike bwubu bwibikorwa bikubye kabiri ibya SO-8. Kugeza ubu, Vishay yahaye uburenganzira bwa tekinoroji ya Polar PAK kuri STMicroelectronics.
Vishay Polar PAK
3. Onsemi SO-8 na WDFN8 ipaki yuzuye
KURI Semiconductor yateje imbere ubwoko bubiri bwa MOSFETs igororotse, muribwo SO-8 ihujwe na flat-gurş ikoreshwa ninama nyinshi. KURI Semiconductor nshya yatangijwe NVMx na NVTx imbaraga MOSFETs ikoresha compact DFN5 (SO-8FL) na WDFN8 kugirango igabanye igihombo cyumuyoboro. Iragaragaza kandi QG nkeya hamwe nubushobozi bwo kugabanya igihombo cyabashoferi.
KURI Semiconductor SO-8 Flat Isonga
KURI Semiconductor WDFN8
4. Gupakira NXP LFPAK na QLPAK
NXP (yahoze yitwa Philps) yateje imbere tekinoroji yo gupakira SO-8 muri LFPAK na QLPAK. Muri byo, LFPAK ifatwa nkimbaraga zizewe SO-8 kwisi; mugihe QLPAK ifite ibiranga ubunini buto hamwe nubushyuhe bwo hejuru bwo gukwirakwiza. Ugereranije na SO-8 isanzwe, QLPAK ifata umwanya wa PCB ya 6 * 5mm kandi ifite ubushyuhe bwa 1.5k / W.
NXP LFPAK
NXP QLPAK
4. ST Semiconductor PowerSO-8 paki
Imbaraga za STMicroelectronics MOSFET tekinoroji yo gupakira harimo SO-8, PowerSO-8, PowerFLAT, DirectFET, PolarPAK, nibindi. Muri byo, Power SO-8 ni verisiyo nziza ya SO-8. Mubyongeyeho, hariho PowerSO-10, PowerSO-20, TO-220FP, H2PAK-2 nibindi bikoresho.
STMicroelectronics Imbaraga SO-8
5. Fairchild Semiconductor Power 56 paki
Imbaraga 56 nizina ryihariye rya Farichild, kandi izina ryayo ni DFN5 × 6. Ahantu hapakirwa haragereranywa nubusanzwe TSOP-8 ikoreshwa, kandi pake yoroheje ibika uburebure bwibikoresho, kandi igishushanyo cya Thermal-Pad hepfo kigabanya ubukana bwumuriro. Kubwibyo, abakora ibikoresho byinshi byamashanyarazi bohereje DFN5 × 6.
Fairchild Imbaraga 56
6. Ikosora mpuzamahanga (IR) Igikoresho cya FET itaziguye
Direct FET itanga ubukonje bwo hejuru murwego rwa SO-8 cyangwa ntoya kandi ikwiranye na AC-DC na DC-DC ikoresha amashanyarazi muri mudasobwa, mudasobwa zigendanwa, itumanaho nibikoresho bya elegitoroniki. Icyuma cya DirectFET gishobora kubaka gitanga ubushyuhe bwikubye kabiri, bikubye kabiri ubushobozi bwogukoresha imbaraga zumuvuduko mwinshi wa DC-DC buck ugereranije nububiko busanzwe bwa plastike. Porogaramu ya FET Directeur ni ubwoko bwisubiraho, hamwe nubushyuhe bwa D (D) bwerekeje hejuru kandi butwikiriwe nigikonoshwa cyicyuma, binyuze mubushuhe. Gupakira neza FET itezimbere cyane ubushyuhe kandi bigatwara umwanya muto hamwe nubushyuhe bwiza.
Vuga muri make
Mu bihe biri imbere, nkuko inganda zikora ibikoresho bya elegitoronike zikomeje gutera imbere mu cyerekezo cya ultra-thin, miniaturisation, voltage nkeya, hamwe n’umuyaga mwinshi, isura n’imiterere yo gupakira imbere ya MOSFET nayo izahinduka kugirango ihuze neza n’iterambere ry’inganda zikenewe. inganda. Mubyongeyeho, kugirango ugabanye urwego rwo gutoranya abakora ibikoresho bya elegitoronike, inzira yiterambere rya MOSFET mu cyerekezo cya modularisation hamwe na sisitemu yo gupakira bizagenda bigaragara, kandi ibicuruzwa bizatera imbere muburyo buhujwe kuva mubice byinshi nkibikorwa nigiciro. . Ipaki nimwe mubintu byingenzi byerekana guhitamo MOSFET. Ibicuruzwa bitandukanye bya elegitoronike bifite ibyangombwa byamashanyarazi bitandukanye, kandi ibidukikije bitandukanye nabyo bisaba guhuza ingano yubunini kugirango ihuze. Mu gutoranya nyirizina, icyemezo kigomba gufatwa ukurikije ibikenewe nyabyo mu ihame rusange. Sisitemu zimwe za elegitoronike zigarukira ku bunini bwa PCB n'uburebure bw'imbere. Kurugero, module itanga ibikoresho bya sisitemu yitumanaho mubisanzwe ikoresha DFN5 * 6 na DFN3 * 3 ipaki kubera uburebure burebure; mubikoresho bimwe na bimwe bya ACDC bitanga amashanyarazi, ultra-thin igishushanyo cyangwa kubera igicucu gikwiye gikusanyirizwa hamwe na TO220 yamashanyarazi MOSFETs. Muri iki gihe, amapine arashobora kwinjizwa mu mizi mu buryo butaziguye, bidakwiriye ibicuruzwa byapakiwe TO247; ibishushanyo mbonera bya ultra-thin bisaba igikoresho cyibikoresho kugororwa no gushyirwaho neza, bizongera umurego wo guhitamo MOSFET.
Nigute wahitamo MOSFET
Injeniyeri yigeze kumbwira ko atigeze areba urupapuro rwambere rwurupapuro rwamakuru MOSFET kuko amakuru "ngirakamaro" yagaragaye gusa kurupapuro rwa kabiri ndetse no hanze yarwo. Mubyukuri buri paji kurupapuro rwa MOSFET ikubiyemo amakuru yingirakamaro kubashushanya. Ariko ntabwo buri gihe byumvikana uburyo bwo gusobanura amakuru yatanzwe nababikora.
Iyi ngingo irerekana bimwe mubyingenzi byingenzi bya MOSFETs, uburyo bivugwa kuri datasheet, nishusho isobanutse ukeneye kubyumva. Kimwe nibikoresho byinshi bya elegitoronike, MOSFETs ziterwa nubushyuhe bwo gukora. Ni ngombwa rero gusobanukirwa imiterere yikizamini aho ibipimo byavuzwe bikoreshwa. Ni ngombwa kandi gusobanukirwa niba ibipimo ubona muri "Kumenyekanisha ibicuruzwa" ari "ntarengwa" cyangwa "bisanzwe", kuko impapuro zimwe zidasobanura neza.
Urwego rwa voltage
Ikintu cyibanze kiranga MOSFET ni umuyoboro wacyo wa voltage VDS, cyangwa "drain-source breakdown voltage", iyo ikaba ari voltage ndende MOSFET ishobora kwihanganira nta byangiritse mugihe irembo riba rito-ryerekeje kumasoko hamwe numuyoboro wamazi. ni 250μA. . VDS nayo yitwa "voltage ntarengwa ntarengwa kuri 25 ° C", ariko ni ngombwa kwibuka ko iyi voltage yuzuye iterwa n'ubushyuhe, kandi mubisanzwe hariho "coefficient ya VDS" mumpapuro zamakuru. Ugomba kandi gusobanukirwa ko VDS ntarengwa ari DC ya voltage hiyongereyeho imbaraga zose za voltage na ripples zishobora kuba zihari. Kurugero, niba ukoresheje igikoresho cya 30V kumashanyarazi ya 30V hamwe na 100mV, 5ns spike, voltage izarenga igipimo ntarengwa cyibikoresho kandi igikoresho gishobora kwinjira muburyo bwa avalanche. Muri iki kibazo, ubwizerwe bwa MOSFET ntibushobora kwemezwa. Ku bushyuhe bwinshi, coefficient yubushyuhe irashobora guhindura cyane voltage yo kumeneka. Kurugero, bimwe N-umuyoboro MOSFETs ufite voltage ya 600V ifite coefficient nziza yubushyuhe. Mugihe begereye ubushyuhe bwabo ntarengwa, coefficient yubushyuhe itera izi MOSFETS kwitwara nka 650V MOSFETS. Amategeko menshi yabakoresha MOSFET asaba ibintu bitandukanya 10% kugeza 20%. Mu bishushanyo bimwe na bimwe, urebye ko voltage yamenetse nyayo iri hejuru ya 5% kugeza 10% kurenza agaciro kagenwe kuri 25 ° C, igishushanyo mbonera cyingirakamaro kizongerwaho mubishushanyo nyirizina, bifitiye akamaro cyane igishushanyo. Icyangombwa kimwe muburyo bwo guhitamo neza MOSFETs ni ugutahura uruhare rwumuryango-isoko ya voltage VGS mugihe cyo gutwara. Iyi voltage ni voltage yemeza neza ko MOSFET itwarwa neza na RDS ntarengwa. Niyo mpanvu on-resistance ihora ijyanye nurwego rwa VGS, kandi kuri iyi voltage niho igikoresho gishobora gufungura. Ingaruka yingenzi yo gushushanya nuko udashobora gufungura MOSFET byuzuye hamwe na voltage iri munsi ya VGS ntoya yakoreshejwe kugirango ugere ku gipimo cya RDS (kuri). Kurugero, kugirango utware MOSFET yuzuye kuri microcontroller ya 3.3V, ugomba kuba ushobora gufungura MOSFET kuri VGS = 2.5V cyangwa munsi.
Kurwanya, kwishyuza amarembo, na "ishusho y'icyubahiro"
Kurwanya-MOSFET buri gihe bigenwa kumurongo umwe cyangwa nyinshi kumarembo-y-isoko. Umubare ntarengwa wa RDS (kuri) urashobora kuba 20% kugeza kuri 50% kurenza agaciro gasanzwe. Umubare ntarengwa wa RDS (kuri) ubusanzwe werekana agaciro ku bushyuhe bwa 25 ° C. Ku bushyuhe bwo hejuru, RDS (kuri) irashobora kwiyongera 30% kugeza kuri 150%, nkuko bigaragara ku gishushanyo cya 1. Kubera ko RDS (kuri) ihinduka hamwe nubushyuhe kandi agaciro ntarengwa ntigashobora kwemezwa, kumenya ibyagezweho bishingiye kuri RDS (kuri) ntabwo aribyo uburyo nyabwo.
Igishushanyo 1 RDS (kuri) yiyongera hamwe nubushyuhe buri hagati ya 30% na 150% yubushyuhe ntarengwa bwo gukora
Kurwanya-ni ngombwa cyane kuri N-umuyoboro na P-umuyoboro MOSFETs. Muguhindura ibikoresho byamashanyarazi, Qg nigipimo cyingenzi cyo guhitamo N-umuyoboro MOSFETs ikoreshwa muguhindura ibikoresho byamashanyarazi kuko Qg igira ingaruka kubihombo. Ibi bihombo bifite ingaruka ebyiri: imwe nigihe cyo guhinduranya bigira ingaruka kuri MOSFET kuri no kuzimya; ikindi nimbaraga zisabwa kugirango zishyure ubushobozi bw irembo mugihe cyose cyo guhinduranya. Ikintu kimwe ugomba kuzirikana nuko Qg iterwa n irembo-isoko ya voltage, nubwo gukoresha Vgs yo hepfo bigabanya igihombo cyo guhindura. Nuburyo bwihuse bwo kugereranya MOSFETs igenewe gukoreshwa muguhindura porogaramu, abashushanya akenshi bakoresha formula imwe igizwe na RDS (kuri) kubihombo bitwara na Qg muguhindura igihombo: RDS (kuri) xQg. Iyi "shusho yicyubahiro" (FOM) yerekana muri make imikorere yigikoresho kandi yemerera MOSFETs kugereranwa ukurikije agaciro gasanzwe cyangwa ntarengwa. Kugirango ugereranye neza mubikoresho, ugomba kumenya neza ko VGS imwe ikoreshwa kuri RDS (kuri) na Qg, kandi ko indangagaciro zisanzwe kandi ntarengwa zitabaho kuvangwa hamwe mubitabo. FOM yo hepfo izaguha imikorere myiza muguhindura porogaramu, ariko ntabwo byemewe. Ibisubizo byiza byo kugereranya birashobora kuboneka gusa mumuzunguruko nyirizina, kandi rimwe na rimwe uruziga rushobora gukenera guhuza neza kuri buri MOSFET. Ikigereranyo kigezweho nimbaraga zo gukwirakwiza, hashingiwe kumiterere itandukanye yikizamini, MOSFETs nyinshi zifite imiyoboro imwe cyangwa myinshi ikomeza imiyoboro y'amazi mumpapuro zamakuru. Uzashaka kureba urupapuro rwitondewe kugirango umenye niba igipimo kiri ku bushyuhe bwagenwe (urugero TC = 25 ° C), cyangwa ubushyuhe bwibidukikije (urugero TA = 25 ° C). Ninde muri izi ndangagaciro zingirakamaro bizaterwa nibiranga ibikoresho nibisabwa (reba Ishusho 2).
Igishushanyo 2 Byose ntarengwa bigezweho nimbaraga zamakuru nukuri
Kubikoresho bito byububiko bikoreshwa mubikoresho byabigenewe, urwego rwingenzi rushobora kuba aruko ubushyuhe bwibidukikije bwa 70 ° C. Kubikoresho binini bifite ubushyuhe hamwe no gukonjesha ikirere ku gahato, urwego ruri kuri TA = 25 ℃ rushobora kuba hafi yimiterere nyayo. Kubikoresho bimwe, ipfa irashobora gukora ibintu byinshi kurwego rwo hejuru rwubushyuhe burenze imipaka. Mu mpapuro zimwe na zimwe, urwego "rupfa kugarukira" urwego rwubu ni amakuru yinyongera kurwego rwa "pack-limited" urwego, rushobora kuguha igitekerezo cyimbaraga zurupfu. Ibitekerezo nkibi bikurikizwa kumashanyarazi akomeje, bitaterwa nubushyuhe gusa ahubwo nigihe cyagenwe. Tekereza igikoresho gikora kuri PD = 4W kumasegonda 10 kuri TA = 70 ℃. Ibihe bigize "ikomeza" bizatandukana ukurikije paketi ya MOSFET, bityo rero urashaka gukoresha umugambi usanzwe wubushyuhe bwimyanya ndangagitsina kuva kuri datasheet kugirango urebe uko gukwirakwiza ingufu bisa nyuma yamasegonda 10, amasegonda 100, cyangwa iminota 10 . Nkuko bigaragara ku gishushanyo cya 3, coefficente yubushyuhe bwumuriro wiki gikoresho cyihariye nyuma yimpanuka yamasegonda 10 igera kuri 0.33, bivuze ko iyo paki imaze kugera kumyuzure yumuriro nyuma yiminota igera ku 10, ubushobozi bwo gukwirakwiza ubushyuhe bwibikoresho ni 1.33W gusa aho kuba 4W . Nubwo ubushobozi bwo gukwirakwiza ubushyuhe bwibikoresho bushobora kugera kuri 2W munsi yo gukonja neza.
Igicapo 3 Kurwanya Ubushyuhe bwa MOSFET mugihe amashanyarazi akoreshwa
Mubyukuri, turashobora kugabanya uburyo bwo guhitamo MOSFET mubyiciro bine.
Intambwe yambere: hitamo umuyoboro wa N cyangwa P.
Intambwe yambere muguhitamo igikoresho gikwiye kubishushanyo byawe ni uguhitamo gukoresha N-umuyoboro cyangwa P-umuyoboro MOSFET. Mubisanzwe imbaraga zikoreshwa, mugihe MOSFET ihujwe nubutaka kandi umutwaro uhujwe numuyoboro wamashanyarazi, MOSFET ikora icyerekezo cyo hasi. Muguhindura uruhande rwo hasi, N-umuyoboro MOSFETs igomba gukoreshwa kubera gutekereza kuri voltage isabwa kugirango uzimye igikoresho cyangwa. Iyo MOSFET ihujwe na bisi hanyuma ikaremerera hasi, ikoreshwa ryuruhande rwo hejuru. P-umuyoboro MOSFETs isanzwe ikoreshwa muri iyi topologiya, nayo iterwa no gutekereza kuri voltage. Guhitamo igikoresho gikwiye cya porogaramu yawe, ugomba kumenya voltage isabwa kugirango utware igikoresho nuburyo bworoshye bwo kubikora mugushushanya kwawe. Intambwe ikurikiraho ni ukumenya igipimo gikenewe cya voltage, cyangwa voltage ntarengwa igikoresho gishobora kwihanganira. Urwego rwo hejuru rwa voltage, niko igiciro cyibikoresho kiri hejuru. Ukurikije ubunararibonye bufatika, voltage yagenwe igomba kuba nini kuruta umuyagankuba cyangwa voltage ya bisi. Ibi bizatanga uburinzi buhagije kugirango MOSFET itananirwa. Mugihe uhisemo MOSFET, birakenewe kumenya voltage ntarengwa ishobora kwihanganira kuva kumazi kugera kumasoko, ni ukuvuga VDS ntarengwa. Ni ngombwa kumenya ko voltage ntarengwa MOSFET ishobora kwihanganira impinduka nubushyuhe. Abashushanya bagomba kugerageza voltage ihindagurika hejuru yubushyuhe bwo gukora. Umuvuduko wateganijwe ugomba kuba ufite intera ihagije kugirango utwikire urwego rutandukanye kugirango umenye neza ko umuzenguruko utazatsindwa. Ibindi bintu byumutekano abahanga bashushanya bakeneye gusuzuma harimo imbaraga za voltage ziterwa no guhinduranya ibikoresho bya elegitoronike nka moteri cyangwa transformateur. Umuvuduko uringaniye uratandukanye kubikorwa bitandukanye; mubisanzwe, 20V kubikoresho bigendanwa, 20-30V kubikoresho bya FPGA, na 450-600V kubisabwa 85-220VAC.
Intambwe ya 2: Menya icyerekezo cyagenwe
Intambwe ya kabiri nuguhitamo igipimo cyubu cya MOSFET. Ukurikije ibizunguruka byumuzunguruko, iyi ntera yagenwe igomba kuba nini ntarengwa umutwaro ushobora kwihanganira mubihe byose. Bisa na voltage imiterere, uwashizeho agomba kwemeza ko MOSFET yatoranijwe ishobora kwihanganira iki gipimo kigezweho, nubwo sisitemu itanga imitwe igezweho. Ibintu bibiri byubu bisuzumwa nuburyo bukomeza hamwe na pulse spike. Muburyo bukomeza bwo gutwara, MOSFET iri muburyo butajegajega, aho imiyoboro ihora inyura mubikoresho. Umuvuduko wa pulse bivuga ikintu kinini (cyangwa spike ya spike) inyura mubikoresho. Iyo imiyoboro ntarengwa iri muri ibi bihe imaze kugenwa, ni ikibazo cyo guhitamo igikoresho gishobora gukora iyi nini ntarengwa. Nyuma yo guhitamo ibipimo byagenwe, igihombo cyo gutwara nacyo kigomba kubarwa. Mubihe nyabyo, MOSFET ntabwo ari igikoresho cyiza kuko habaho gutakaza ingufu zamashanyarazi mugihe cyogutwara, aribyo gutakaza igihombo. MOSFET yitwara nka résistoriste ihinduka iyo "kuri", igenwa na RDS (ON) yigikoresho kandi igahinduka cyane hamwe nubushyuhe. Gutakaza ingufu z'igikoresho birashobora kubarwa na Iload2 × RDS (ON). Kuva kurwanywa guhinduka hamwe nubushyuhe, gutakaza ingufu nabyo bizahinduka ugereranije. Iyo hejuru ya voltage VGS ikoreshwa kuri MOSFET, ntoya RDS (ON) izaba nto; muburyo butandukanye, urwego RDS (ON) ruzaba hejuru. Kubushakashatsi bwa sisitemu, aha niho hacururizwa ibicuruzwa bitewe na voltage ya sisitemu. Kubishushanyo mbonera, biroroshye (kandi nibisanzwe) gukoresha voltage yo hasi, mugihe kubishushanyo mbonera byinganda, imbaraga zishobora gukoreshwa. Menya ko kurwanya RDS (ON) bizamuka gato hamwe nubu. Guhindagurika mubintu bitandukanye byamashanyarazi ya RDS (ON) birwanya urashobora kubisanga mumpapuro zubuhanga zitangwa nuwabikoze. Ikoranabuhanga rifite ingaruka zikomeye kubiranga ibikoresho, kubera ko tekinoroji imwe ikunda kongera RDS (ON) mugihe wongeyeho VDS ntarengwa. Kuri tekinoroji nk'iyi, niba ugamije kugabanya VDS na RDS (ON), ugomba kongera ubunini bwa chip, bityo ukongerera ingano ya pake ihuye nibiciro byiterambere. Hariho tekinolojiya myinshi muruganda igerageza kugenzura iyongerekana ryubunini bwa chip, icyingenzi muri byo ni umuyoboro hamwe nogukoresha tekinoroji. Muri tekinoroji yo mu mwobo, umwobo wimbitse winjijwe muri wafer, ubusanzwe ubikwa kuri voltage nkeya, kugirango ugabanye RDS (ON). Kugirango ugabanye ingaruka za VDS ntarengwa kuri RDS (ON), epitaxial growth inkingi / inkingi yinkingi yakoreshejwe mugihe cyiterambere. Kurugero, Fairchild Semiconductor yateje imbere ikoranabuhanga ryitwa SuperFET ryongera izindi ntambwe zo gukora kugirango RDS (ON) igabanuke. Uku kwibanda kuri RDS (ON) ni ngombwa kuko uko voltage yo kumeneka ya MOSFET isanzwe yiyongera, RDS (ON) yiyongera cyane kandi biganisha ku kwiyongera k'ubunini bupfa. Inzira ya SuperFET ihindura umubano werekana hagati ya RDS (ON) nubunini bwa wafer muburyo bumwe. Muri ubu buryo, ibikoresho bya SuperFET birashobora kugera kuri RDS nziza cyane (ON) mubunini buke bupfa, ndetse hamwe na voltage yameneka kugeza kuri 600V. Igisubizo nuko ubunini bwa wafer bushobora kugabanuka kugera kuri 35%. Kubakoresha amaherezo, ibi bivuze kugabanuka gukomeye mubunini bwa paki.
Intambwe ya gatatu: Menya Ibisabwa Ubushyuhe
Intambwe ikurikira muguhitamo MOSFET ni ukubara ubushyuhe bwa sisitemu. Abashushanya bagomba gusuzuma ibintu bibiri bitandukanye, ibintu bibi cyane-ibintu byabayeho. Birasabwa gukoresha ibisubizo bibi cyane byo kubara, kuberako ibisubizo bitanga intera nini yumutekano kandi ikemeza ko sisitemu itazatsindwa. Hariho kandi amakuru yo gupima akeneye kwitabwaho kurupapuro rwa MOSFET; nkubushyuhe bwumuriro hagati ya semiconductor ihuza ibikoresho bipakiye nibidukikije, hamwe nubushyuhe ntarengwa. Ubushyuhe bwihuza bwibikoresho bingana nubushyuhe ntarengwa bwibidukikije hiyongereyeho ibicuruzwa byo kurwanya ubushyuhe hamwe no gukwirakwiza ingufu (ubushyuhe bwihuza = ubushyuhe ntarengwa bw’ibidukikije + [kurwanya ubushyuhe × gukwirakwiza imbaraga]). Ukurikije iri gereranya, imbaraga ntarengwa zo gukwirakwiza sisitemu zirashobora gukemurwa, zingana na I2 × RDS (ON) kubisobanuro. Kuva uwashizeho igenamigambi ntarengwa rizanyura mu gikoresho, RDS (ON) irashobora kubarwa ku bushyuhe butandukanye. Birakwiye ko tumenya ko mugihe ukorana nuburyo bworoshye bwubushyuhe, abashushanya bagomba nanone gutekereza kubushobozi bwumuriro wa semiconductor ihuza / igikoresho cyibikoresho nurubanza / ibidukikije; ibi bisaba ko ikibaho cyumuzingo cyacapwe hamwe na pack bidahita bishyuha. Isenyuka rya Avalanche risobanura ko voltage ihinduranya igikoresho cya semiconductor irenze agaciro ntarengwa kandi ikora umurima w'amashanyarazi ukomeye kugirango wongere amashanyarazi mubikoresho. Ibiriho bizagabanya imbaraga, byongere ubushyuhe bwigikoresho, kandi birashoboka kwangiza igikoresho. Amasosiyete ya Semiconductor azakora ibizamini bya avalanche kubikoresho, abare voltage ya avalanche, cyangwa agerageze gukomera kwigikoresho. Hariho uburyo bubiri bwo kubara voltage ya avalanche yagenwe; bumwe nuburyo bwibarurishamibare naho ubundi ni kubara ubushyuhe. Kubara Ubushyuhe bukoreshwa cyane kuko nibikorwa bifatika. Ibigo byinshi byatanze ibisobanuro birambuye byo kugerageza ibikoresho. Kurugero, Fairchild Semiconductor itanga "Amabwiriza ya MOSFET Avalanche Amashanyarazi" (Amabwiriza ya Power MOSFET Avalanche-ashobora gukurwa kurubuga rwa Fairchild). Usibye kubara, tekinoroji nayo igira uruhare runini ku ngaruka za avalanche. Kurugero, kwiyongera k'ubunini bupfa byongera ubukana bwa avalanche kandi amaherezo byongera ibikoresho bikomeye. Kubakoresha amaherezo, ibi bivuze gukoresha paki nini muri sisitemu.
Intambwe ya 4: Menya imikorere ya switch
Intambwe yanyuma muguhitamo MOSFET ni ukumenya imikorere yo guhinduranya MOSFET. Hariho ibipimo byinshi bigira ingaruka kumikorere, ariko icyingenzi ni irembo / imiyoboro, irembo / isoko na drain / isoko ubushobozi. Izi capacator zitera igihombo mugikoresho kuko zishyurwa igihe cyose zihinduye. Umuvuduko wo guhinduranya MOSFET rero uragabanuka, kandi imikorere yibikoresho nayo iragabanuka. Kugirango ubare igihombo cyose mubikoresho mugihe cyo guhinduranya, uwashizeho ibishushanyo agomba kubara igihombo mugihe cyo gufungura (Eon) nigihombo mugihe cyo kuzimya (Eoff). Imbaraga zose za MOSFET zihindura zishobora kugaragazwa nuburinganire bukurikira: Psw = (Eon + Eoff) × guhinduranya inshuro. Irembo ry'irembo (Qgd) rifite ingaruka zikomeye muguhindura imikorere. Ukurikije akamaro ko guhinduranya imikorere, tekinolojiya mishya ihora itezwa imbere kugirango ikemure iki kibazo cyo guhinduranya. Kongera ingano ya chip byongera amafaranga yumuryango; ibi byongera ubunini bwibikoresho. Kugirango ugabanye igihombo cyo guhinduranya, hagaragaye ikoranabuhanga rishya nkumuyoboro mwinshi wo hasi wa okiside, ugamije kugabanya amafaranga yumuryango. Kurugero, tekinolojiya mishya SuperFET irashobora kugabanya igihombo cyogutwara no kunoza imikorere yo kugabanya kugabanya RDS (ON) hamwe namafaranga (Qg). Muri ubu buryo, MOSFETs irashobora kwihanganira umuvuduko mwinshi wihuta (dv / dt) hamwe nuhererekanyabubasha (di / dt) mugihe cyo guhinduranya, ndetse birashobora no gukora byizewe mugihe kinini cyo guhinduranya.
Igihe cyo kohereza: Ukwakira-23-2023
