Uburyo MOSFETS ikora

Ihame ryakazi rya MOSFET rishingiye cyane cyane kumiterere yihariye yimiterere n'ingaruka z'umuriro w'amashanyarazi. Ibikurikira nubusobanuro burambuye bwuburyo MOSFETs ikora:

 

I. Imiterere shingiro ya MOSFET

MOSFET igizwe ahanini n irembo (G), isoko (S), imiyoboro (D), hamwe na substrate (B, rimwe na rimwe ihuza isoko kugirango ikore igikoresho cya terefone eshatu). Muri N-umuyoboro wongera MOSFETs, substrate mubusanzwe ni ibikoresho bike bya P-silikoni yo mu bwoko bwa silicon aho uturere tubiri twa N-twinshi twahimbwe cyane kugirango dukore isoko nisoko. Ubuso bwa substrate yo mu bwoko bwa P butwikiriwe na firime yoroheje cyane ya okiside (dioxyde de silicon) nk'urwego rukingira, kandi electrode ishushanya nk'irembo. Iyi miterere ituma irembo ryiziritse kuri P-semiconductor substrate, imiyoboro nisoko, bityo rero byitwa kandi insimburangingo-irembo ryumurima.

II. Ihame ry'imikorere

MOSFETs ikora mukoresheje amarembo yumuriro wa voltage (VGS) kugirango igenzure imiyoboro y'amazi (ID). By'umwihariko, mugihe ushyizwemo amarembo meza yinkomoko ya voltage, VGS, irenze zeru, hejuru yumuriro wo hejuru kandi utari mwiza wumuriro w'amashanyarazi uzagaragara kumurongo wa oxyde munsi y irembo. Uyu murima w'amashanyarazi ukurura electroni z'ubuntu muri P-karere, bigatuma zegeranya munsi ya oxyde, mugihe zanze umwobo muri P-karere. Mugihe VGS yiyongera, imbaraga zumuriro wamashanyarazi ziriyongera kandi kwibanda kuri electroni yubusa ikurura. Iyo VGS igeze kuri voltage runaka (VT), ubwinshi bwa electroni yubusa yakusanyirijwe mukarere ni nini bihagije kugirango habeho akarere gashya ka N (umuyoboro wa N-umuyoboro), ukora nkikiraro gihuza imiyoboro nisoko. Kuri iyi ngingo, niba voltage imwe yo gutwara (VDS) ibaho hagati yumuyoboro nisoko, indangamuntu ya drake itangira gutemba.

III. Gushinga no guhindura imiyoboro

Ishirwaho ryumuyoboro uyobora nurufunguzo rwimikorere ya MOSFET. Iyo VGS iruta VT, hashyizweho umuyoboro uyobora kandi indangamuntu ya drain igira ingaruka kuri VGS na VDS.VGS igira ingaruka ku ndangamuntu igenzura ubugari n'imiterere y'umuyoboro uyobora, mu gihe VDS igira ingaruka ku ndangamuntu nka voltage yo gutwara.Ni ni ngombwa kumenya ko niba umuyoboro uyobora udashizweho (ni ukuvuga, VGS iri munsi ya VT), noneho niyo VDS ihari, indangamuntu ya drain ntabwo igaragara.

IV. Ibiranga MOSFETS

Kwinjira kwinshi:Kwinjiza inzitizi ya MOSFET ni ndende cyane, yegereye ubuziraherezo, kubera ko hariho urwego rukingira hagati y irembo n’akarere kavomamo isoko kandi gusa irembo ridakomeye.

Impanuka nke zisohoka:MOSFETs ni ibikoresho bigenzurwa na voltage aho isoko-imiyoboro yamashanyarazi ishobora guhinduka hamwe ninjiza yinjiza, bityo impedance yabyo ni nto.

Urujya n'uruza:Iyo ikorera mukarere kiyuzuzamo, ikigezweho cya MOSFET mubyukuri ntaho bihuriye nimpinduka ziva mumashanyarazi-yamashanyarazi, itanga umuyaga uhoraho.

 

Ubushyuhe bwiza:MOSFETs ifite ubushyuhe bwagutse bwo gukora kuva kuri -55 ° C kugeza kuri + 150 ° C.

V. Gusaba no gushyira mu byiciro

MOSFETs ikoreshwa cyane mumuzunguruko wa sisitemu, imiyoboro ya analogue, imashanyarazi nizindi nzego. Ukurikije ubwoko bwibikorwa, MOSFETs irashobora gushyirwa mubikorwa byo kuzamura no kugabanuka; ukurikije ubwoko bwumuyoboro, barashobora gushyirwa mubice N-umuyoboro na P-umuyoboro. Ubu bwoko butandukanye bwa MOSFETs bufite inyungu zabwo muburyo butandukanye bwo gusaba.

Muncamake, ihame ryakazi rya MOSFET ni ukugenzura imiterere noguhindura umuyoboro uyobora unyuze mumasoko yumuriro wa voltage, nayo igenzura imigendekere yumugezi. Kwinjiza kwinshi kwinshi, gusohora kwinshi, guhora hamwe nubushyuhe buhoraho bituma MOSFETs igira ikintu cyingenzi mumuzunguruko wa elegitoroniki.