1, BYINSHIIntangiriro
FieldEffect Transistor ahinnye (FET)) umutwe MOSFET. n'umubare muto w'abatwara kugira uruhare mu gutwara ubushyuhe, bizwi kandi nka transistor nyinshi. Nibintu bya voltage mastering ubwoko bwa kimwe cya kabiri kirenze urugero. Hano haribintu birwanya umusaruro mwinshi (10 ^ 8 ~ 10 ^ 9Ω), urusaku ruke, gukoresha ingufu nke, urwego ruhagaze, byoroshye guhuza, ntakintu cya kabiri gisenyuka, umurimo wubwishingizi bwinyanja mugari nibindi byiza, ubu byarahindutse transiporiste ya bipolar na tristoriste ya tristoriste ikomeye.
2, Ibiranga BYINSHI
1, MOSFET nigikoresho cyo kugenzura voltage, kinyuze kuri VGS (irembo ryamashanyarazi voltage) ID igenzura (drain DC);
2, MOSFET'sibisohoka DC pole ni nto, bityo ibisohoka birwanya ni binini.
3, ni ugukoresha umubare muto wabatwara kugirango bakore ubushyuhe, bityo afite igipimo cyiza cyumutekano;
4, igizwe n'inzira yo kugabanya coefficient yo kugabanya amashanyarazi ni ntoya kuruta triode igizwe n'inzira yo kugabanya coefficient yo kugabanya;
5, MOSFET ubushobozi bwo kurwanya irradasiyo;
6, kubera kubura ibikorwa bitari byo byo gukwirakwiza oligon biterwa nuduce duto tw urusaku, urusaku rero ruke.
3 principle Ihame ryibikorwa byinshi
MOSFET'sihame ry'imikorere mu nteruro imwe, ni "imiyoboro - isoko hagati y'irangamuntu inyura mu muyoboro w'irembo n'umuyoboro uri hagati y'isangano rya pn ryakozwe no kubogama kwa rezo ya voltage master ID", kugira ngo bisobanuke neza, indangamuntu inyura mu bugari yinzira, ni ukuvuga, umuyoboro wambukiranya agace, ni impinduka zinyuranye kubogama kwa pn ihuza, itanga igabanuka rya Impamvu Impamvu yo kwaguka kwagutse. Mu nyanja idahagije ya VGS = 0, kubera ko kwaguka kwinzibacyuho atari nini cyane, ukurikije kongerwaho umurima wa rukuruzi wa VDS hagati y’isoko y’amazi, electron zimwe mu nyanja zituruka zikururwa na imiyoboro, ni ukuvuga, hari ibikorwa bya ID ID kuva kumazi kugera kumasoko. Igice giciriritse cyagutse kuva kumarembo kugera kumugezi bituma umubiri wose wumuyoboro ukora ubwoko bwo guhagarika, ID yuzuye. Hamagara iyi fomu. Kugereranya urwego rwinzibacyuho kumuyoboro wintambamyi zose, aho imbaraga za DC zaciwe.
Kuberako nta kugenda kwubusa kwa electron nu mwobo murwego rwinzibacyuho, ifite hafi yo gukingira ibintu muburyo bwiza, kandi biragoye ko rusange muri rusange itemba. Ariko rero umurima wamashanyarazi hagati yumuyoboro - isoko, mubyukuri, ibice byombi byinzibacyuho ihuza imiyoboro hamwe n amarembo y amarembo hafi yigice cyo hepfo, kubera ko amashanyarazi yamashanyarazi akurura electroni yihuta cyane binyuze murwego rwinzibacyuho. Ubwinshi bwumurima wa drift burigihe burigihe butanga ibyuzuye indangamuntu.
Umuzunguruko ukoresha uruvange rwa P-umuyoboro wongerewe MOSFET hamwe na N-umuyoboro wa MOSFET. Iyo ibyinjijwe ari bike, P-umuyoboro MOSFET ikora kandi ibisohoka bihujwe na terefone nziza yo gutanga amashanyarazi. Iyo ibyinjijwe ari byinshi, N-umuyoboro MOSFET ikora kandi ibisohoka bihujwe nubutaka bwo gutanga amashanyarazi. Muri uyu muzunguruko, P-umuyoboro MOSFET na N-umuyoboro MOSFET uhora ukorera muri reta zinyuranye, hamwe nibyiciro byinjira nibisohoka byahindutse.
Igihe cyo kohereza: Apr-30-2024