Ibipimo nka capacitance y amarembo no kurwanya-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) nibimenyetso byingenzi byo gusuzuma imikorere yayo. Ibikurikira nubusobanuro burambuye kuri ibi bipimo:
I. Ubushobozi bw'irembo
Ubushobozi bw'irembo burimo ahanini ubushobozi bwo kwinjiza (Ciss), ubushobozi bwo gusohora (Coss) hamwe na capacitance yo guhinduranya (Crss, izwi kandi nka Miller capacitance).
Ubushobozi bwinjiza (Ciss):
IBISOBANURO: Ubushobozi bwo kwinjiza nubushobozi bwuzuye hagati y irembo nisoko nisoko, kandi bigizwe nubushobozi bwamarembo (Cgs) hamwe nubushobozi bwo kumena amarembo (Cgd) buhujwe kuburinganire, ni ukuvuga Ciss = Cgs + Cgd.
Imikorere: Ubushobozi bwo kwinjiza bugira ingaruka kumuvuduko wa MOSFET. Iyo ubushobozi bwo kwinjiza bwishyuwe kuri voltage ntarengwa, igikoresho gishobora gufungura; yasohotse ku gaciro runaka, igikoresho kirashobora kuzimwa. Kubwibyo, umuzunguruko wo gutwara hamwe na Ciss bigira ingaruka itaziguye kubikoresho byo gufungura no gutinda kuzimya.
Ubushobozi bwo gusohoka (Coss):
Igisobanuro: Ubushobozi bwo gusohora nubushobozi bwuzuye hagati yumuyoboro nisoko, kandi bugizwe nubushobozi bwamazi (Cds) hamwe nubushobozi bwamarembo (Cgd) muburyo bubangikanye, ni ukuvuga Coss = Cds + Cgd.
Uruhare: Muburyo bworoshye bwo guhinduranya porogaramu, Coss ni ngombwa cyane kuko ishobora gutera resonance mukuzunguruka.
Ubushobozi bwo kohereza ibintu (Crss):
Igisobanuro: Ubushobozi bwo guhinduranya ibintu bihwanye na capacitance yo mu irembo (Cgd) kandi bakunze kwita ubushobozi bwa Miller.
Uruhare: Ubushobozi bwo guhinduranya ibintu ni ikintu cyingenzi cyo kuzamuka no kugwa kwigihe cyo guhinduka, kandi bigira ingaruka no gutinda kuzimya. Ubushobozi bwa capacitance buragabanuka uko imiyoboro ya drain-isoko yiyongera.
II. Kurwanya (Rds (kuri))
Igisobanuro: Kurwanya-kurwanya ni ukurwanya inkomoko n’amazi ya MOSFET muri leta kuri leta mubihe byihariye (urugero, imiyoboro idasanzwe yamenetse, voltage yumuryango, nubushyuhe).
Ibintu bigira ingaruka: Kurwanya-ntabwo ari agaciro gahamye, bigira ingaruka kubushyuhe, hejuru yubushyuhe, niko Rds (kuri). Mubyongeyeho, urwego rwo hejuru rwihanganira voltage, nubunini bwimiterere yimbere ya MOSFET, niko bihwanye no kurwanya.
Akamaro: Mugihe utegura amashanyarazi ahinduranya cyangwa umushoferi wumuzunguruko, birakenewe ko dusuzuma kurwanya-MOSFET, kubera ko umuyaga unyura muri MOSFET uzatwara ingufu kuriyi myigaragambyo, kandi iki gice cyingufu zikoreshwa cyitwa- gutakaza imbaraga. Guhitamo MOSFET hamwe na on-resistance irashobora kugabanya igihombo cyo kurwanya.
Icya gatatu, ibindi bipimo byingenzi
Usibye ubushobozi bwamarembo no kurwanywa, MOSFET ifite ibindi bipimo byingenzi nka:
V (BR) DSS (Umuyoboro Wamashanyarazi Amashanyarazi):Umuyoboro wamazi wamazi aho umuyoboro unyura mumazi ugera kumurongo wihariye mubushyuhe bwihariye kandi hamwe nisoko ryamarembo bigufi. Hejuru yagaciro, umuyoboro urashobora kwangirika.
VGS (th) (Umuvuduko wa Threshold):Umuvuduko w'irembo usabwa gutera umuyoboro uyobora gutangira gukora hagati yisoko n'amazi. Kubisanzwe N-umuyoboro MOSFETs, VT ni 3 kugeza 6V.
ID.Umubare ntarengwa wa DC uhoraho ushobora kwemererwa na chip kurwego rwo hejuru rwubushyuhe.
IDM (Imiyoboro ntarengwa isunikwa):Yerekana urwego rwumuvuduko wamashanyarazi igikoresho gishobora gukora, hamwe numuyoboro wa pulsed uri hejuru cyane kurenza DC ikomeza.
PD (imbaraga nyinshi zo gukwirakwiza):igikoresho gishobora gukwirakwiza ingufu nyinshi zikoreshwa.
Muncamake, ubushobozi bw irembo, kurwanywa nibindi bipimo bya MOSFET nibyingenzi mubikorwa byayo no kubishyira mubikorwa, kandi bigomba guhitamo no gushushanya ukurikije ibintu byihariye bisabwa.
Igihe cyo kohereza: Nzeri-18-2024