Gusesengura Kuzamura no Kugabanuka MOSFETS

D-FET iri mumarembo 0 kubogama mugihe hariho umuyoboro, birashobora kuyobora FET; E-FET iri mumarembo 0 kubogama mugihe nta muyoboro uhari, ntishobora kuyobora FET. ubu bwoko bubiri bwa FET bufite imiterere yabyo kandi ikoresha. Muri rusange, kuzamura FET muburyo bwihuse, imbaraga nke zumuzunguruko zifite agaciro kanini; kandi iki gikoresho kirimo gukora, ni polarite y irembo bias voltage voltage ya kimwe, biroroshye cyane mugushushanya.

 

Ibyo bita uburyo bwongerewe uburyo: iyo umuyoboro wa VGS = 0 ari leta yaciwe, hiyongereyeho VGS ikwiye, abatwara benshi bakururwa n irembo, bityo "bakazamura" abatwara mukarere, bagakora umuyoboro uyobora. n-umuyoboro wongerewe MOSFET mubusanzwe ni ibumoso-iburyo bwa simmetriki topologiya, aribwo P-semiconductor ku gisekuru cyurwego rwa firime ya SiO2. Itanga urwego rwimikorere ya firime ya SiO2 kumurongo wa P-semiconductor, hanyuma ikwirakwiza uturere tubiri twinshi cyane N-bwoko bwaYamazaki. , hariho diode zitari nke hamwe na diode yinyuma-yinyuma hagati yumugezi nisoko hamwe na voltage iri hagati ya D na S ntabwo ikora umuyoboro uri hagati ya D na S. Umuyoboro uri hagati ya D na S ntabwo ukorwa na voltage ikoreshwa .

 

Iyo voltage yumuryango wongeyeho, niba 0 <VGS <VGS (th), unyuze mumashanyarazi ya capacitif yakozwe hagati y irembo na substrate, umwobo wa polyon uri mu bwoko bwa P-semiconductor hafi ya hepfo y irembo wasubijwe hasi, kandi igabanuka ryoroshye rya ion mbi igaragara; icyarimwe, bizakurura oligons muri yo kugirango yimuke hejuru yubutaka, ariko umubare ni muto kandi ntuhagije kugirango habeho umuyoboro uyobora imiyoboro yamazi nisoko, kubwibyo rero ntibihagije kugirango habeho indangamuntu yubu. kwiyongera VGS, iyo VGS > VGS (th) (VGS) electron, urashobora gukora umwobo, imiyoboro nisoko yitumanaho. Niba umuyoboro wamazi wongeyeho muri iki gihe, imiyoboro yamazi irashobora gushirwaho ID. electron mu muyoboro uyobora wakozwe munsi y irembo, kubera umwobo utwara hamwe na P-semiconductor polarite ihabanye, nuko yitwa anti-type layer. Mugihe VGS ikomeje kwiyongera, ID izakomeza kwiyongera. ID = 0 kuri VGS = 0V, kandi imiyoboro y'amazi ibaho nyuma ya VGS> VGS (th), bityo, ubu bwoko bwa MOSFET bwitwa kuzamura MOSFET.

 

Igenzura ryumubano wa VGS kumuyoboro wamazi urashobora gusobanurwa nu murongo iD = f (VGS (th)) | VDS = const, ibyo bita ihererekanyabubasha riranga umurongo, hamwe nubunini bwimisozi ihererekanyabubasha biranga umurongo, gm, iragaragaza igenzura ryumuyaga ukoresheje amarembo yinkomoko yumuriro. ubunini bwa gm ni mA / V, gm nayo yitwa transconductance.