Nigute ushobora guhitamo neza voltage ntoya MOSFETs

Umuvuduko muto MOSFET guhitamo nikintu cyingenzi cyane cyaBYINSHIguhitamo ntabwo aribyiza birashobora kugira ingaruka kumikorere nigiciro cyumuzunguruko wose, ariko kandi bizazana ibibazo byinshi kubashakashatsi, kuburyo bwo guhitamo neza MOSFET?

Guhitamo N-umuyoboro cyangwa P-Umuyoboro Intambwe yambere muguhitamo igikoresho gikwiye kugirango ushushanye ni uguhitamo niba wakoresha N-umuyoboro cyangwa P-umuyoboro MOSFET Muburyo busanzwe bukoreshwa mumashanyarazi, MOSFET igizwe na voltage ntoya kuruhande iyo MOSFET irahagaze kandi umutwaro uhujwe na voltage yumurongo. Muri voltage ntoya kuruhande, N-umuyoboro MOSFET ugomba gukoreshwa bitewe no gusuzuma voltage isabwa kuzimya cyangwa kuzimya igikoresho.

Iyo MOSFET ihujwe na bisi hanyuma umutwaro ugahagarara, impinduka nini ya voltage kuruhande igomba gukoreshwa. P-umuyoboro MOSFETs ikoreshwa muriyi topologiya, na none kubitekerezo bya voltage. Menya igipimo kiriho. Hitamo urutonde rwubu rwa MOSFET. Ukurikije imiterere yumuzunguruko, uru rutonde rugomba kuba urwego ntarengwa umutwaro ushobora kwihanganira mubihe byose.

Bisa nikibazo cya voltage, uwashizeho agomba kwemeza ko abatoranijweBYINSHIIrashobora kwihanganira iki gipimo kigezweho, niyo sisitemu itanga imigozi ya spike. Imanza ebyiri zubu zigomba gusuzumwa nuburyo bukomeza nuburyo bwa pulse. Muburyo bukomeza bwo gutwara, MOSFET ihagaze neza, mugihe ikigezweho kinyuze mubikoresho.

Imitsi ya pulse ni mugihe hari ibinini binini (cyangwa imitoma yumuyaga) binyura mubikoresho. Iyo imiyoboro ntarengwa iri muri ibi bihe imaze kugenwa, ni ikibazo cyo guhitamo igikoresho gishobora kwihanganira iyi miyoboro ntarengwa. Kugena Ibisabwa Ubushyuhe Guhitamo MOSFET nabyo bisaba kubara ibisabwa byubushyuhe bwa sisitemu. Ibishushanyo mbonera bigomba gusuzuma ibintu bibiri bitandukanye, urubanza rubi nukuri. Birasabwa ko imibare ikoreshwa nabi cyane kuko itanga intera nini yumutekano kandi ikemeza ko sisitemu itazananirwa. Hariho kandi ibipimo bimwe na bimwe ugomba kumenya kurupapuro rwa MOSFET; nkubushyuhe bwumuriro hagati ya semiconductor ihuza igikoresho cya paki nibidukikije, hamwe nubushyuhe ntarengwa bwo guhuza. Guhitamo guhindura imikorere, intambwe yanyuma muguhitamo MOSFET nuguhitamo imikorere yo guhindura imikorere yaBYINSHI.

Hariho ibipimo byinshi bigira ingaruka kumikorere, ariko icyingenzi ni irembo / imiyoboro, irembo / isoko, hamwe na drain / isoko capacitance. Ubu bushobozi butera igihombo cyo guhinduranya igikoresho kuko bigomba kwishyurwa muri buri guhinduranya. umuvuduko wo guhinduranya MOSFET rero uragabanuka kandi imikorere yigikoresho iragabanuka. Kugirango ubare igihombo cyose cyibikoresho mugihe cyo guhinduranya, uwashushanyije agomba kubara igihombo cyo gufungura (Eon) nigihombo cyo kuzimya.

Iyo agaciro ka vGS ari nto, ubushobozi bwo gukurura electroni ntabwo bukomeye, kumeneka - isoko hagati yubundi nta muyoboro uyobora utanga, vGS yiyongera, yinjiye muri P substrate yinyuma yubuso bwa electron kuri kwiyongera, iyo vGS igeze a agaciro runaka, izo electroni mumarembo hafi ya P substrate igaragara igizwe nurwego ruto rwubwoko bwa N, kandi hamwe na N + zone ebyiri zahujwe Iyo vGS igeze ku gaciro runaka, izo electroni mumarembo hafi ya P substrate Kugaragara bizaba bigize N-ubwoko bworoshye, kandi buhujwe n’akarere ka N + kabiri, mu muyoboro - isoko igizwe n'umuyoboro wa N wo mu bwoko bwa N, ubwoko bwacyo buyobora kandi butandukanye na P substrate, bigize anti-type layer. V. Nukuvuga, N-umuyoboro MOSFET muri vGS <VT, ntishobora gukora umuyoboro uyobora, umuyoboro uri muburyo bwo guhagarika. Igihe cyose iyo vGS ≥ VT, gusa iyo umuyoboro ugizwe. Umuyoboro umaze gushingwa, umuyoboro wamazi ubyara wongeyeho voltage ya vDS imbere hagati yumuyoboro - isoko.

Ariko Vgs ikomeje kwiyongera, reka tuvuge ko IRFPS40N60KVgs = 100V mugihe Vds = 0 na Vds = 400V, ibintu bibiri, imikorere ya tube kugirango izane ingaruka, niba yatwitse, igitera hamwe nuburyo bwimbere mubikorwa nukuntu kwiyongera kwa Vgs bizagabanuka Rds (kuri) igabanya igihombo cyo guhinduranya, ariko mugihe kimwe izongera Qg, kugirango igihombo cyo gufungura kibe kinini, bigira ingaruka kumikorere ya voltage ya MOSFET GS na Vgg kugeza kuri Cgs kwishyuza kandi kuzamuka, yageze kuri kubungabunga voltage Vth, MOSFET itangira kuyobora; MOSFET DS yiyongera muri iki gihe, ubushobozi bwa Millier mugihe gito bitewe no gusohora ubushobozi bwa DS no gusohora, kwishyuza GS ubushobozi ntabwo bigira ingaruka nyinshi; Qg = Cgs * Vgs, ariko amafaranga azakomeza kwiyubaka.

Umuvuduko wa DS wa MOSFET ugabanuka kuri voltage imwe na Vgs, ubushobozi bwa Millier bwiyongera cyane, voltage yo hanze yo hanze ihagarika kwishyuza Millier capacitance, voltage ya capacitance ya GS ntigihinduka, voltage kuri capacitance ya Millier iriyongera, mugihe voltage kuri ubushobozi bwa DS bukomeje kugabanuka; voltage ya DS ya MOSFET igabanuka kugeza kuri voltage kumuyoboro wuzuye, ubushobozi bwa Millier buba buto Umuvuduko wa DS wa MOSFET ugabanuka kuri voltage mugihe cyo kwiyuzuzamo, ubushobozi bwa Millier buba buto kandi bwishyuzwa hamwe nubushobozi bwa GS na disiki yo hanze. voltage, na voltage kuri capacitance ya GS irazamuka; imiyoboro yo gupima voltage ni murugo rwa 3D01, 4D01, na 3SK ya Nissan.

G-pole (irembo) kwiyemeza: koresha ibikoresho bya diode ya multimeter. Niba ikirenge hamwe nandi maguru abiri hagati yigitonyanga cyiza kandi kibi kirenze 2V, ni ukuvuga kwerekana "1", ukuguru ni irembo G. Hanyuma ugahana ikaramu kugirango upime ibirenge byombi bisigaye, igitonyanga cya voltage ni gito icyo gihe, ikaramu yumukara ihujwe na D-pole (drain), ikaramu itukura ihujwe na S-pole (isoko).