"MOSFET" ni impfunyapfunyo ya Metal Oxide Semicoductor Field Effect Transistor. Nigikoresho gikozwe mubikoresho bitatu: ibyuma, oxyde (SiO2 cyangwa SiN) na semiconductor. MOSFET nimwe mubikoresho byibanze mumashanyarazi ya semiconductor. Byaba biri mubishushanyo mbonera bya IC cyangwa urwego rwumuzunguruko urwego, ni runini cyane. Ibipimo nyamukuru bya MOSFET birimo ID, IDM, VGSS, V (BR) DSS, RDS (kuri), VGS (th), nibindi urabizi? Isosiyete ya OLUKEY, nka winsok yo muri Tayiwani hagati-hejuru-yohejuru-yo hagati na voltage ntoBYINSHIserivise itanga serivise, ifite itsinda ryibanze rifite uburambe bwimyaka 20 yo kugusobanurira muburyo burambuye ibipimo bitandukanye bya MOSFET!
Ibisobanuro byubusobanuro bwibipimo bya MOSFET
1. Ibipimo bikabije:
ID: Ntarengwa ntarengwa-isoko. Yerekeza kumurongo ntarengwa wemerewe kunyura hagati yumuyoboro nisoko iyo transistor yumurima ikora mubisanzwe. Imikorere yimikorere ya tristoriste yumurima ntigomba kurenza ID. Iyi parameter iragabanuka uko ubushyuhe bwihuriro bwiyongera.
IDM: Ntarengwa ya pulsed yamashanyarazi-isoko. Iyi parameter izagabanuka uko ubushyuhe bwihuza bwiyongera, byerekana ingaruka zirwanya ingaruka kandi nabyo bifitanye isano nigihe cyimpiswi. Niba iyi parameter ari nto cyane, sisitemu irashobora kuba ifite ibyago byo gusenywa nubu mugihe cyo kugerageza OCP.
PD: Imbaraga ntarengwa zashize. Yerekeza kumurongo ntarengwa wamazi-isoko yamashanyarazi yemerewe atabangamiye imikorere yumurima wa transistor. Iyo ikoreshejwe, gukoresha ingufu za FET bigomba kuba munsi yibya PDSM hanyuma ugasiga intera runaka. Iyi parameter muri rusange igabanuka uko ubushyuhe bwihuza bwiyongera
VDSS: Amashanyarazi ntarengwa-yihanganira voltage. Umuyoboro w-isoko ya voltage iyo imiyoboro itemba igeze ku gaciro kihariye (kiyongera cyane) munsi yubushyuhe bwihariye n-amarembo-masoko magufi. Umuyoboro wamazi wamazi muriki kibazo nanone witwa avalanche breakdown voltage. VDSS ifite coefficient nziza yubushyuhe. Kuri -50 ° C, VDSS igera kuri 90% yibyo kuri 25 ° C. Bitewe nindamunite zisanzwe zisigara mubikorwa bisanzwe, voltage yamenetse ya voltage ya MOSFET ihora iruta voltage nominal yagenwe.
OLUKEYInama zishyushye: Kugirango ibicuruzwa byizewe, mubihe bibi byakazi, birasabwa ko imbaraga zumurimo zitagomba kurenga 80 ~ 90% byagaciro kagenwe.
VGSS: Irembo ntarengwa-isoko irwanya voltage. Yerekeza ku gaciro ka VGS mugihe impinduka zinyuranye hagati y irembo nisoko zitangiye kwiyongera cyane. Kurenza iyi voltage agaciro bizatera dielectric gusenyuka kumuryango wa oxyde oxyde, gusenya kandi bidasubirwaho.
TJ: Ubushyuhe ntarengwa bwo gukora. Ubusanzwe ni 150 ℃ cyangwa 175 ℃. Mugihe cyimikorere yimiterere yibikoresho, birakenewe kwirinda kurenza ubu bushyuhe no gusiga intera runaka.
TSTG: ubushyuhe bwububiko
Ibi bipimo byombi, TJ na TSTG, bihinduranya urwego rwubushyuhe bwemewe byemewe nigikoresho gikora nububiko. Ubu bushyuhe bwashyizweho kugirango bwuzuze byibuze ubuzima bukenewe bwibikoresho. Niba igikoresho cyemewe gukora muri ubu bushyuhe, ubuzima bwakazi buzongerwa cyane.
2. Ibipimo bihamye
Ibizamini bya MOSFET muri rusange ni 2.5V, 4.5V, na 10V.
V (BR) DSS: Umuyoboro-uturuka kumashanyarazi. Yerekeza kuri voltage ntarengwa ya voltage-yumuriro imbaraga za tristoriste ishobora kwihanganira mugihe amarembo-isoko ya voltage VGS ari 0. Ibi nibintu bigabanya imipaka, kandi voltage ikora ikoreshwa mumashanyarazi ya transistor igomba kuba munsi ya V (BR) DSS. Ifite ubushyuhe bwiza. Kubwibyo, agaciro kibi bintu mubihe byubushyuhe buke bigomba gufatwa nkumutekano.
(V)
RDS (kuri): Mubihe bimwe na bimwe bya VGS (mubisanzwe 10V), ubushyuhe bwihuza hamwe numuyoboro wamazi, kurwanya ntarengwa hagati yimiyoboro nisoko iyo MOSFET ifunguye. Nibintu byingenzi cyane bigena imbaraga zikoreshwa mugihe MOSFET ifunguye. Iyi parameter muri rusange yiyongera uko ubushyuhe bwihuriro bwiyongera. Kubwibyo, agaciro kiyi parameter kurwego rwo hejuru rukora rwubushyuhe rugomba gukoreshwa mukubara igihombo nigabanuka rya voltage.
VGS (th): gufungura voltage (voltage voltage). Iyo irembo ryo hanze rigenzura voltage VGS irenze VGS (th), hejuru yubutaka bwo hejuru bwamazi hamwe nuturere dukomora bigize umuyoboro uhujwe. Mubisabwa, irembo rya voltage iyo ID ihwanye na mA 1 munsi yumuyoboro mugufi wumuzunguruko bikunze kwitwa gufungura amashanyarazi. Iyi parameter muri rusange igabanuka uko ubushyuhe bwihuriro bwiyongera
IDSS. Mubisanzwe kurwego rwa microamp
IGSS: irembo-isoko yimodoka igezweho cyangwa ihindagurika. Kubera ko MOSFET yinjiza impedance nini cyane, IGSS muri rusange murwego rwa nanoamp.
3. Ibipimo bigenda neza
gfs: kurengana. Yerekeza ku kigereranyo cyimpinduka ziva mumazi asohoka kumihindagurikire yumuryango-isoko ya voltage. Ni igipimo cyubushobozi bwamarembo-isoko ya voltage yo kugenzura imiyoboro y'amazi. Nyamuneka reba imbonerahamwe yo kwimura hagati ya gfs na VGS.
Ikibazo: Ubushobozi bwo kwishyuza amarembo yose. MOSFET nigikoresho cyo gutwara ubwoko bwa voltage. Inzira yo gutwara ni inzira yo gushiraho voltage yumuryango. Ibi bigerwaho no kwishyuza ubushobozi hagati y amarembo namazi. Iyi ngingo izaganirwaho ku buryo burambuye hepfo.
Qgs: Ubushobozi bwo kwishyuza isoko
Qgd: kwishyiriraho amarembo (ukurikije ingaruka za Miller). MOSFET nigikoresho cyo gutwara ubwoko bwa voltage. Inzira yo gutwara ni inzira yo gushiraho voltage yumuryango. Ibi bigerwaho no kwishyuza ubushobozi hagati y amarembo namazi.
Td (kuri): gutinda gutwara. Igihe uhereye igihe kwinjiza voltage yazamutse igera kuri 10% kugeza VDS igabanutse kugera kuri 90% ya amplitude yayo
Tr: igihe cyo kuzamuka, igihe cyo gusohora voltage VDS kumanuka uva kuri 90% ukagera kuri 10% ya amplitude
Td.
Tf: Igihe cyagwa, igihe cyo gusohora voltage VDS kuzamuka kuva 10% kugera kuri 90% ya amplitude
Ciss: Shyiramo ubushobozi, mugufi-umuzenguruko wamazi nisoko, hanyuma upime ubushobozi hagati y irembo nisoko hamwe nikimenyetso cya AC. Ciss = CGD + CGS (Inzira ngufi ya CDS). Ifite ingaruka itaziguye kumurongo wo gufungura no kuzimya igikoresho.
Coss: Ibisohoka bisohoka, bigufi-bizunguruka irembo nisoko, hanyuma upime ubushobozi hagati yumuyoboro nisoko hamwe nikimenyetso cya AC. Coss = CDS + CGD
Crss: Hindura ubushobozi bwo kohereza. Hamwe nisoko ihujwe nubutaka, ubushobozi bwapimwe hagati yumuyoboro n irembo Crss = CGD. Kimwe mubintu byingenzi byingenzi byahinduwe ni ukuzamuka no kugwa. Crss = CGD
Ubushobozi bwa interelectrode hamwe na MOSFET iterwa nubushobozi bwa MOSFET igabanijwemo ubushobozi bwo kwinjiza, ubushobozi bwo gusohora hamwe nubushobozi bwo gutanga ibitekerezo nababikora benshi. Indangagaciro zavuzwe ni izimiyoboro ihamye-y-isoko ya voltage. Ubu bushobozi burahinduka nkuko imiyoboro-yamazi ya voltage ihinduka, kandi agaciro ka capacitance gafite ingaruka nke. Iyinjiza ubushobozi bwagaciro itanga gusa igereranya ryerekana kwishyurwa risabwa numuzunguruko, mugihe amakuru yo kwishyuza amarembo aringirakamaro. Irerekana ingano yingufu irembo rigomba kwishyuza kugirango rigere kumuryango wihariye wa voltage.
4. Gusenyuka kw'ibiza biranga ibipimo
Isenyuka rya avalanche iranga ibipimo byerekana ubushobozi bwa MOSFET bwo guhangana na voltage ikabije muri reta. Niba voltage irenze imiyoboro-yamazi ntarengwa, igikoresho kizaba kimeze nabi.
EAS: Ingufu imwe ya pulse avalanche imbaraga zo gusenyuka. Nibipimo ntarengwa, byerekana ingufu ntarengwa zo gusenyuka kwa avalanche MOSFET ishobora kwihanganira.
IAR: inkangu
AMATwi: Ingufu zisubiramo ingufu za Avalanche
5. Muri vivo diode ibipimo
IS: Gukomeza ntarengwa ntarengwa (kuva isoko)
ISM: pulse ntarengwa yubusa (kuva isoko)
VSD: imbere ya voltage igabanuka
Trr: gusubiza inyuma igihe cyo gukira
Qrr: Guhindura amafaranga
Ton: Imbere yo gutwara. (Ahanini ni ntarengwa)
MOSFET yo gufungura igihe no kuzimya igihe cyo gusobanura
Mugihe cyo gusaba, ibintu bikurikira bigomba gusuzumwa:
1. Ibiranga ubushyuhe bwiza buranga V (BR) DSS. Ibi biranga, bitandukanye nibikoresho bya bipolar, bituma birushaho kwizerwa nkuko ubushyuhe busanzwe bukora bwiyongera. Ariko ugomba kandi kwitondera kwizerwa kwayo mugihe cy'ubushyuhe buke butangiye.
2. Ibipimo byubushyuhe bubi biranga V (GS) th. Irembo ryinjira rishobora kugabanuka kurwego runaka uko ubushyuhe bwihuza bwiyongera. Imirasire imwe nimwe izagabanya ubu bushobozi bwo kurenga, birashoboka ndetse no munsi ya 0 ishobora. Iyi mikorere isaba injeniyeri kwitondera kwivanga no gukurura ibinyoma bya MOSFETs muribi bihe, cyane cyane kubisabwa na MOSFET ifite ubushobozi buke bwo kurenga. Bitewe nibi biranga, rimwe na rimwe birakenewe gushushanya ubushobozi bwa off-voltage yumushoferi wamarembo kubiciro bibi (bivuga N-ubwoko, P-ubwoko nibindi) kugirango wirinde kwivanga no gukurura ibinyoma.
3.Ubushyuhe bwiza bwa coefficient iranga VDSon / RDSo. Ibiranga VDSon / RDSon yiyongera gato uko ubushyuhe bwihuza bwiyongera bituma bishoboka gukoresha MOSFETs muburyo butaziguye. Ibikoresho bya Bipolar bitandukanye cyane muriki kibazo, kubikoresha rero kubigereranya biba bigoye cyane. RDSon nayo iziyongera gato uko ID yiyongera. Ibi biranga hamwe nubushyuhe bwiza buranga ihuriro hamwe nubuso RDSon ituma MOSFET irinda gusenyuka kwa kabiri nkibikoresho bya bipolar. Ariko, twakagombye kumenya ko ingaruka zibi biranga ari nke. Iyo ikoreshejwe muburyo bubangikanye, gusunika-gukurura cyangwa izindi porogaramu, ntushobora kwishingikiriza byimazeyo kwiyobora kuriki kintu. Haracyakenewe ingamba zifatizo. Ibi biranga kandi bisobanura ko igihombo cyo gutwara kiba kinini mubushyuhe bwinshi. Kubwibyo, hagomba kwitonderwa byumwihariko guhitamo ibipimo mugihe ubara igihombo.
4. Ibipimo bibi bya coefficient biranga indangamuntu, gusobanukirwa ibipimo bya MOSFET nibiranga indangamuntu bizagabanuka cyane uko ubushyuhe bwihuriro bwiyongera. Ibi biranga bituma akenshi biba ngombwa gusuzuma ibipimo byindangamuntu kubushyuhe bwinshi mugihe cyo gushushanya.
5. Ibipimo bibi byubushyuhe buranga ubushobozi bwa avalanche IER / EAS. Nyuma yubushyuhe bwo guhuza bwiyongereye, nubwo MOSFET izaba ifite DSS nini ya V (BR), twakagombye kumenya ko EAS izagabanuka cyane. Nukuvuga ko ubushobozi bwayo bwo guhangana n’ibiza mu gihe cy'ubushyuhe bwo hejuru buba bugifite intege nke ugereranije n'ubushyuhe busanzwe.
6. Ntabwo byitezwe ko bizakoreshwa nkibintu nyamukuru bitwara muri loop mugushushanya. Guhagarika diode ikunze guhuzwa murukurikirane kugirango itesha agaciro diode ya parasitike mumubiri, kandi diode yinyongera ikoreshwa mugukora amashanyarazi yumuzunguruko. Ariko, irashobora gufatwa nkuwitwaye mugihe cyogutwara igihe gito cyangwa bimwe mubisabwa muri iki gihe nko gukosora.
7. Kuzamuka byihuse byubushobozi bwamazi birashobora gutera uburiganya-gukurura amarembo, bityo rero ibyo bisabwa bigomba kwitabwaho mubikorwa binini bya dVDS / dt (imiyoboro yihuta yo guhinduranya ibintu).