Ibipimo nka capacitance y amarembo no kurwanya-MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) nibimenyetso byingenzi byo gusuzuma imikorere yayo. Ibikurikira nubusobanuro burambuye kuri ibi bipimo:
I. Ubushobozi bw'irembo
Ubushobozi bw'irembo burimo ahanini ubushobozi bwo kwinjiza (Ciss), ubushobozi bwo gusohora (Coss) hamwe na capacitance yo guhinduranya (Crss, izwi kandi nka Miller capacitance).
Ubushobozi bwo Kwinjiza (Ciss):
IBISOBANURO: Ubushobozi bwo kwinjiza nubushobozi bwuzuye hagati y irembo nisoko nisoko, kandi bigizwe nubushobozi bwamarembo (Cgs) hamwe nubushobozi bwo kumena amarembo (Cgd) buhujwe kuburinganire, ni ukuvuga Ciss = Cgs + Cgd.
Imikorere: Ubushobozi bwo kwinjiza bugira ingaruka kumuvuduko wa MOSFET. Iyo ubushobozi bwo kwinjiza bwishyuwe kuri voltage ntarengwa, igikoresho gishobora gufungura; yasohotse ku gaciro runaka, igikoresho kirashobora kuzimwa. Kubwibyo, umuzunguruko wo gutwara hamwe na Ciss bigira ingaruka itaziguye kubikoresho byo gufungura no gutinda kuzimya.
Ubushobozi bwo gusohoka (Coss):
Igisobanuro: Ubushobozi bwo gusohora nubushobozi bwuzuye hagati yumuyoboro nisoko, kandi bugizwe nubushobozi bwamazi (Cds) hamwe nubushobozi bwamarembo (Cgd) muburyo bubangikanye, ni ukuvuga Coss = Cds + Cgd.
Uruhare: Muburyo bworoshye bwo guhinduranya porogaramu, Coss ni ngombwa cyane kuko ishobora gutera resonance mukuzunguruka.
Ubushobozi bwo kohereza ibintu (Crss):
Igisobanuro: Ubushobozi bwo guhinduranya ibintu bihwanye na capacitance yo mu irembo (Cgd) kandi bakunze kwita ubushobozi bwa Miller.
Uruhare: Ubushobozi bwo guhinduranya ibintu ni ikintu cyingenzi cyo kuzamuka no kugwa kwigihe cyo guhinduka, kandi bigira ingaruka no gutinda kuzimya. Ubushobozi bwa capacitance buragabanuka uko imiyoboro ya drain-isoko yiyongera.
II. Kurwanya (Rds (kuri))
Igisobanuro: Kurwanya-kurwanya ni ukurwanya inkomoko n’amazi ya MOSFET muri leta kuri leta mubihe byihariye (urugero, imiyoboro idasanzwe yamenetse, voltage yumuryango, nubushyuhe).
Ibintu bigira ingaruka: Kurwanya-ntabwo ari agaciro gahamye, bigira ingaruka kubushyuhe, hejuru yubushyuhe, niko Rds (kuri). Mubyongeyeho, urwego rwo hejuru rwihanganira voltage, nubunini bwimiterere yimbere ya MOSFET, niko bihwanye no kurwanya.
Akamaro: Mugihe utegura amashanyarazi ahinduranya cyangwa umushoferi wumuzunguruko, birakenewe ko dusuzuma kurwanya-MOSFET, kubera ko umuyaga unyura muri MOSFET uzatwara ingufu kuriyi myigaragambyo, kandi iki gice cyingufu zikoreshwa cyitwa- gutakaza imbaraga. Guhitamo MOSFET hamwe na on-resistance irashobora kugabanya igihombo cyo kurwanya.
Icya gatatu, ibindi bipimo byingenzi
Usibye ubushobozi bwamarembo no kurwanywa, MOSFET ifite ibindi bipimo byingenzi nka:
V (BR) DSS (Umuyoboro Wamashanyarazi Amashanyarazi):Umuyoboro wamazi wamazi aho umuyoboro unyura mumazi ugera kumurongo wihariye mubushyuhe bwihariye kandi hamwe nisoko ryamarembo bigufi. Hejuru yagaciro, umuyoboro urashobora kwangirika.
VGS (th) (Umuvuduko wa Threshold):Umuvuduko w'irembo usabwa gutera umuyoboro uyobora gutangira gukora hagati yisoko n'amazi. Kubisanzwe N-umuyoboro MOSFETs, VT ni 3 kugeza 6V.
Indangamuntu (Ikigereranyo ntarengwa gikomeza)Umubare ntarengwa wa DC uhoraho ushobora kwemererwa na chip kurwego rwo hejuru rwubushyuhe.
IDM (Imiyoboro ntarengwa isunikwa):Yerekana urwego rwumuvuduko wamashanyarazi igikoresho gishobora gukora, hamwe numuyoboro wa pulsed uri hejuru cyane kurenza DC ikomeza.
PD (imbaraga nyinshi zo gukwirakwiza):igikoresho gishobora gukwirakwiza ingufu nyinshi zikoreshwa.
Muncamake, ubushobozi bw irembo, kurwanywa nibindi bipimo bya MOSFET nibyingenzi mubikorwa byayo no kubishyira mubikorwa, kandi bigomba guhitamo no gushushanya ukurikije ibintu byihariye bisabwa.