WSD75N12GDN56 N-umuyoboro 120V 75A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD75N12GDN56 N-umuyoboro 120V 75A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD75N12GDN56

BVDSS :120V

ID :75A

RDSON :6mΩ

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD75N12GDN56 MOSFET ni 120V, ikigezweho ni 75A, kurwanya ni 6mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

Ibikoresho byubuvuzi MOSFET, drone MOSFET, PD itanga amashanyarazi MOSFET, LED itanga amashanyarazi MOSFET, ibikoresho byinganda MOSFET.

MOSFET isaba imirima WINSOK MOSFET ihuye nindi mibare yibikoresho

AOS MOSFET AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923.PANJIT MOSFET PSMQC76N12LS1.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDSS

Umuyoboro-Kuri-Inkomoko ya Voltage

120

V

VGS

Irembo-Kuri-Inkomoko ya Voltage

± 20

V

ID

1

Imiyoboro ikomeza (Tc = 25 ℃)

75

A

ID

1

Imiyoboro ikomeza (Tc = 70 ℃)

70

A

IDM

Gusunika Umuyoboro

320

A

IAR

Impanuka imwe ya avalanche igezweho

40

A

EASa

Ingufu imwe ya pulse avalanche

240

mJ

PD

Gukwirakwiza imbaraga

125

W

TJ , Tstg

Gukora Ihuriro nububiko Ubushyuhe Urwego

-55 kugeza 150

TL

Ubushyuhe ntarengwa bwo kugurisha

260

RθJC

Kurwanya Ubushyuhe, Ihuriro-Kuri-Urubanza

1.0

℃ / W.

RθJA

Kurwanya Ubushyuhe, Ihuriro-Kuri-Ibidukikije

50

℃ / W.

 

Ikimenyetso

Parameter

Ibizamini

Min.

Ubwoko.

Icyiza.

Ibice

VDSS

Drain to Source Breakdown Voltage VGS = 0V, ID = 250µA

120

--

--

V

IDSS

Drain to Source Leakage Current VDS = 120V, VGS = 0V

--

--

1

µA

IGSS (F)

Irembo Kuri Inkomoko Imbere Kumeneka VGS = + 20V

--

--

100

nA

IGSS (R)

Irembo ryinkomoko ihindagurika VGS = -20V

--

--

-100

nA

VGS (TH)

Irembo rya Threshold Umuvuduko VDS = VGS, ID = 250µA

2.5

3.0

3.5

V

RDS (ON) 1

Umuyoboro-Kuri-Inkomoko Kuri-Kurwanya VGS = 10V, ID = 20A

--

6.0

6.8

gFS

Imbere Transconductance VDS = 5V, ID = 50A  

130

--

S

Ciss

Ubushobozi bwinjiza VGS = 0V VDS = 50V f =1.0MHz

--

4282

--

pF

Coss

Ubushobozi bwo gusohoka

--

429

--

pF

Crss

Hindura Ubushobozi bwo Kwimura

--

17

--

pF

Rg

Kurwanya amarembo

--

2.5

--

Ω

td (ON)

Gufungura igihe cyo gutinda

ID = 20A VDS = 50V VGS =

10V RG = 5Ω

--

20

--

ns

tr

Haguruka

--

11

--

ns

td (OFF)

Kuzimya-Gutinda Igihe

--

55

--

ns

tf

Igihe cyo Kugwa

--

28

--

ns

Qg

Amafaranga yose yishyurwa VGS = 0 ~ 10V VDS = 50VID = 20A

--

61.4

--

nC

Qgs

Irembo Inkomoko

--

17.4

--

nC

Qgd

Kwishyuza Amarembo

--

14.1

--

nC

IS

Diode Imbere TC = 25 ° C.

--

--

100

A

ISM

Diode Impanuka

--

--

320

A

VSD

Diode Imbere Umuvuduko IS = 6.0A, VGS = 0V

--

--

1.2

V

trr

Subiza igihe cyo gukira IS = 20A, VDD = 50V dIF/ dt = 100A / μs

--

100

--

ns

Qrr

Amafaranga yo Kwisubiraho

--

250

--

nC


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