WSD75100DN56 N-umuyoboro 75V 100A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD75100DN56 N-umuyoboro 75V 100A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD75100DN56

BVDSS :75V

ID :100A

RDSON :5.3mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD75100DN56 MOSFET ni 75V, ikigezweho ni 100A, kurwanya ni 5.3mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

AOS MOSFET AON6276, AON6278, AON628, AON6282, AON6448.Onsemi, FOSCHILD MOSFET NVMFS6H824N 966X.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDS

Umuyoboro-Inkomoko ya voltage

75

V

VGS

Irembo-SourUmuyoboro

±25

V

TJ

Ubushyuhe ntarengwa

150

° C.

ID

Ububiko Ubushyuhe Urwego

-55 kugeza 150

° C.

IS

Diode Gukomeza Imbere Ibiriho, T.C= 25 ° C.

50

A

ID

Umuyoboro uhoraho, V.GS= 10V, T.C= 25 ° C.

100

A

Umuyoboro uhoraho, V.GS= 10V, T.C= 100 ° C.

73

A

IDM

Gusunika Imiyoboro Yubu, T.C= 25 ° C.

400

A

PD

Ikwirakwizwa ryinshi ryingufu, T.C= 25 ° C.

155

W

Ikwirakwizwa ryinshi ryingufu, T.C= 100 ° C.

62

W

RθJA

Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije, t = 10s ̀

20

° C.

Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije, Leta ihamye

60

° C.

RqJC

Ubushyuhe bwo Kurwanya-Guhuza Urubanza

0.8

° C.

IAS

Avalanche Yubu, pulse imwe, L = 0.5mH

30

A

EAS

Ingufu za Avalanche, pulse imwe, L = 0.5mH

225

mJ

 

Ikimenyetso

Parameter

Ibisabwa

Min.

Ubwoko.

Icyiza.

Igice

BVDSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko VGS= 0V, I.D= 250uA

75

---

---

V

BVDSS / △ TJ

BVDSSCoefficient yubushyuhe Reba kuri 25, I.D= 1mA

---

0.043

---

V/

RDS (ON)

Imiyoboro ihamye-Inkomoko Kuri-Kurwanya2 VGS = 10V, I.D= 25A

---

5.3

6.4

mΩ

VGS (th)

Irembo rya Threshold Umuvuduko VGS=VDS, I.D= 250uA

2.0

3.0

4.0

V

VGS (th)

VGS (th)Coefficient yubushyuhe

---

-6.94

---

mV /

IDSS

Umuyoboro-Inkomoko yamenetse VDS= 48V, V.GS= 0V, T.J= 25

---

---

2

uA

VDS= 48V, V.GS= 0V, T.J= 55

---

---

10

IGSS

Irembo-Inkomoko Kumeneka VGS=±20V, V.DS= 0V

---

---

±100

nA

gfs

Imbere Transconductance VDS= 5V, I.D= 20A

---

50

---

S

Rg

Kurwanya Irembo VDS= 0V, V.GS= 0V, f = 1MHz

---

1.0

2

Ω

Qg

Amafaranga yose yishyurwa (10V) VDS= 20V, V.GS= 10V, I.D= 40A

---

65

85

nC

Qgs

Irembo-Inkomoko

---

20

---

Qgd

Amafaranga yishyurwa

---

17

---

Td (kuri)

Gufungura-Gutinda Igihe VDD= 30V, V.GEN= 10V, R.G=1Ω, I.D= 1A, RL = 15Ω.

---

27

49

ns

Tr

Haguruka

---

14

26

Td (kuzimya)

Kuzimya-Gutinda Igihe

---

60

108

Tf

Igihe cyo Kugwa

---

37

67

Cgutanga

Ubushobozi bwinjiza VDS= 20V, V.GS= 0V, f = 1MHz

3450

3500 4550

pF

Coss

Ubushobozi bwo gusohoka

245

395

652

Crss

Hindura Ubushobozi bwo Kwimura

100

195

250


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