WSD6070DN56 N-umuyoboro 60V 80A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD6070DN56 N-umuyoboro 60V 80A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD6070DN56

BVDSS :60V

ID :80A

RDSON :7.3mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD6070DN56 MOSFET ni 60V, ikigezweho ni 80A, kurwanya ni 7.3mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, moteri MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

POTENS Semiconductor MOSFET PDC696X.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDS

Umuyoboro-Inkomoko ya voltage

60

V

VGS

Irembo-SourUmuyoboro

±20

V

TJ

Ubushyuhe ntarengwa

150

° C.

ID

Ububiko Ubushyuhe Urwego

-55 kugeza 150

° C.

IS

Diode Gukomeza Imbere Ibiriho, T.C= 25 ° C.

80

A

ID

Umuyoboro uhoraho, V.GS= 10V, T.C= 25 ° C.

80

A

Umuyoboro uhoraho, V.GS= 10V, T.C= 100 ° C.

66

A

IDM

Gusunika Imiyoboro Yubu, T.C= 25 ° C.

300

A

PD

Ikwirakwizwa ryinshi ryingufu, T.C= 25 ° C.

150

W

Ikwirakwizwa ryinshi ryingufu, T.C= 100 ° C.

75

W

RθJA

Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije, t = 10s ̀

50

° C / W.

Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije, Leta ihamye

62.5

° C / W.

RqJC

Ubushyuhe bwo Kurwanya-Guhuza Urubanza

1

° C / W.

IAS

Avalanche Yubu, pulse imwe, L = 0.5mH

30

A

EAS

Ingufu za Avalanche, pulse imwe, L = 0.5mH

225

mJ

 

Ikimenyetso

Parameter

Ibisabwa

Min.

Ubwoko.

Icyiza.

Igice

BVDSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko VGS= 0V, I.D= 250uA

60

---

---

V

BVDSS / △ TJ

BVDSSCoefficient yubushyuhe Reba kuri 25, I.D= 1mA

---

0.043

---

V/

RDS (ON)

Imiyoboro ihamye-Inkomoko Kuri-Kurwanya2 VGS = 10V, I.D= 40A

---

7.0

9.0

mΩ

VGS (th)

Irembo rya Threshold Umuvuduko VGS=VDS, I.D= 250uA

2.0

3.0

4.0

V

VGS (th)

VGS (th)Coefficient yubushyuhe

---

-6.94

---

mV /

IDSS

Umuyoboro-Inkomoko yamenetse VDS= 48V, V.GS= 0V, T.J= 25

---

---

2

uA

VDS= 48V, V.GS= 0V, T.J= 55

---

---

10

IGSS

Irembo-Inkomoko Kumeneka VGS=±20V, V.DS= 0V

---

---

±100

nA

gfs

Imbere Transconductance VDS= 5V, I.D= 20A

---

50

---

S

Rg

Kurwanya Irembo VDS= 0V, V.GS= 0V, f = 1MHz

---

1.0

---

Ω

Qg

Amafaranga yose yishyurwa (10V) VDS= 30V, V.GS= 10V, I.D= 40A

---

48

---

nC

Qgs

Irembo-Inkomoko

---

17

---

Qgd

Amafaranga yishyurwa

---

12

---

Td (kuri)

Gufungura-Gutinda Igihe VDD= 30V, V.GEN= 10V, R.G=1Ω, I.D= 1A, RL = 15Ω.

---

16

---

ns

Tr

Haguruka

---

10

---

Td (kuzimya)

Kuzimya-Gutinda Igihe

---

40

---

Tf

Igihe cyo Kugwa

---

35

---

Cgutanga

Ubushobozi bwinjiza VDS= 30V, V.GS= 0V, f = 1MHz

---

2680

---

pF

Coss

Ubushobozi bwo gusohoka

---

386

---

Crss

Hindura Ubushobozi bwo Kwimura

---

160

---


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