WSD6060DN56 N-umuyoboro 60V 65A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD6060DN56 N-umuyoboro 60V 65A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD6060DN56

BVDSS :60V

ID :65A

RDSON :7.5mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD6060DN56 MOSFET ni 60V, ikigezweho ni 65A, kurwanya ni 7.5mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, moteri MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Igice
Ibipimo rusange      

VDSS

Umuyoboro-Inkomoko ya voltage  

60

V

VGSS

Irembo-Inkomoko y'umuvuduko  

± 20

V

TJ

Ubushyuhe ntarengwa  

150

° C.

TSTG Ububiko Ubushyuhe Urwego  

-55 kugeza 150

° C.

IS

Diode Gukomeza Imbere Yubu Tc= 25 ° C.

30

A

ID

Imiyoboro ikomeza Tc= 25 ° C.

65

A

Tc= 70 ° C.

42

I DM b

Umuyoboro wa Pulse Yageragejwe Tc= 25 ° C.

250

A

PD

Ikwirakwizwa ryinshi ryingufu Tc= 25 ° C.

62.5

W

TC= 70 ° C.

38

RqJL

Ubushyuhe bwo Kurwanya-Ihuriro ryo kuyobora Leta ihamye

2.1

° C / W.

RqJA

Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije t £ 10s

45

° C / W.
Leta ihamyeb 

50

NJYE d

Avalanche Yubu, pulse imwe L = 0.5mH

18

A

E AS d

Ingufu za Avalanche, pulse imwe L = 0.5mH

81

mJ

 

Ikimenyetso

Parameter

Ibizamini Min. Ubwoko. Icyiza. Igice
Ibiranga Imiterere          

BVDSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko VGS= 0V, I.DS= 250mA

60

-

-

V

IDSS Irembo rya Zeru Umuyoboro w'amazi VDS= 48V, V.GS= 0V

-

-

1

mA
         
      TJ= 85 ° C.

-

-

30

 

VGS (th)

Irembo rya Threshold Umuvuduko VDS=VGS, I.DS= 250mA

1.2

1.5

2.5

V

IGSS

Irembo risohoka VGS= ± 20V, V.DS= 0V

-

-

± 100 nA

R DS (ON) 3

Umuyoboro-Inkomoko Kuri Leta Kurwanya VGS= 10V, I.DS= 20A

-

7.5

10

m W
VGS= 4.5V, I.DS= 15 A.

-

10

15

Ibiranga Diode          
V SD Diode Imbere Umuvuduko ISD= 1A, V.GS= 0V

-

0.75

1.2

V

trr

Guhindura Igihe cyo Kugarura

ISD= 20A, dlSD / dt = 100A / µs

-

42

-

ns

Qrr

Amafaranga yo Kwisubiraho

-

36

-

nC
Ibiranga imbaraga3,4          

RG

Kurwanya Irembo VGS= 0V, V.DS= 0V, F = 1MHz

-

1.5

-

W

Cgutanga

Ubushobozi bwinjiza VGS= 0V,

VDS= 30V,

F = 1.0MHz Ω

-

1340

-

pF

Coss

Ubushobozi bwo gusohoka

-

270

-

Crss

Hindura Ubushobozi bwo Kwimura

-

40

-

td (ON) Gufungura igihe cyo gutinda VDD = 30V, IDS = 1A,

VGEN = 10V, RG = 6Ω.

-

15

-

ns

tr

Gufungura igihe cyo kuzamuka

-

6

-

td (OFF) Kuzimya igihe cyo gutinda

-

33

-

tf

Kuzimya Igihe cyo Kugwa

-

30

-

Ibiranga Irembo Ibiranga 3,4          

Qg

Amafaranga yose yishyurwa VDS= 30V,

VGS= 4.5V, I.DS= 20A

-

13

-

nC

Qg

Amafaranga yose yishyurwa VDS= 30V, V.GS= 10V,

IDS= 20A

-

27

-

Qgth

Irembo ry'Irembo

-

4.1

-

Qgs

Irembo-Inkomoko

-

5

-

Qgd

Amafaranga yishyurwa

-

4.2

-


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