WSD6060DN56 N-umuyoboro 60V 65A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare ：WSD6060DN56

BVDSS ：60V

ID ：65A

RDSON ：7.5mΩ

Umuyoboro ：Umuyoboro

Amapaki ：DFN5X6-8

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Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD6060DN56 MOSFET ni 60V, ikigezweho ni 65A, kurwanya ni 7.5mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, moteri MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Ibipimo byinshi

Ikimenyetso	Parameter		Urutonde	Igice
Ibipimo rusange
VDSS	Umuyoboro-Inkomoko ya voltage		60	V
VGSS	Irembo-Inkomoko y'umuvuduko		± 20	V
T_J	Ubushyuhe ntarengwa		150	° C.
TSTG	Ububiko Ubushyuhe Urwego		-55 kugeza 150	° C.
I_S	Diode Gukomeza Imbere Yubu	T_c= 25 ° C.	30	A
ID	Imiyoboro ikomeza	T_c= 25 ° C.	65	A
ID	Imiyoboro ikomeza	T_c= 70 ° C.	42	A
I DM b	Umuyoboro wa Pulse Yageragejwe	T_c= 25 ° C.	250	A
P_D	Ikwirakwizwa ryinshi ryingufu	T_c= 25 ° C.	62.5	W
P_D	Ikwirakwizwa ryinshi ryingufu	T_C= 70 ° C.	38	W
R_qJL	Ubushyuhe bwo Kurwanya-Ihuriro ryo kuyobora	Leta ihamye	2.1	° C / W.
RqJA	Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije	t £ 10s	45	° C / W.
RqJA	Ubushyuhe bwo Kurwanya-Guhuza Ibidukikije	Leta ihamye^b	50	° C / W.
NJYE^d	Avalanche Yubu, pulse imwe	L = 0.5mH	18	A
E AS d	Ingufu za Avalanche, pulse imwe	L = 0.5mH	81	mJ

Ikimenyetso	Parameter	Ibizamini		Min.	Ubwoko.	Icyiza.	Igice
Ibiranga Imiterere
BV_DSS	Umuyoboro-Inkomoko Kumeneka Umuvuduko	V_GS= 0V, I._DS= 250mA		60	-	-	V
IDSS	Irembo rya Zeru Umuyoboro w'amazi	V_DS= 48V, V._GS= 0V		-	-	1	mA
IDSS	Irembo rya Zeru Umuyoboro w'amazi						mA
			T_J= 85 ° C.	-	-	30
VGS (th)	Irembo rya Threshold Umuvuduko	V_DS=V_GS, I._DS= 250mA		1.2	1.5	2.5	V
IGSS	Irembo risohoka	V_GS= ± 20V, V._DS= 0V		-	-	± 100	nA
R DS (ON) 3	Umuyoboro-Inkomoko Kuri Leta Kurwanya	V_GS= 10V, I._DS= 20A		-	7.5	10	m W
R DS (ON) 3	Umuyoboro-Inkomoko Kuri Leta Kurwanya	V_GS= 4.5V, I._DS= 15 A.		-	10	15	m W
Ibiranga Diode
V SD	Diode Imbere Umuvuduko	I_SD= 1A, V._GS= 0V		-	0.75	1.2	V
t_rr	Guhindura Igihe cyo Kugarura	I_SD= 20A, dl_SD/ dt = 100A / µs		-	42	-	ns
Q_rr	Amafaranga yo Kwisubiraho	I_SD= 20A, dl_SD/ dt = 100A / µs		-	36	-	nC
Ibiranga imbaraga^3,4
R_G	Kurwanya Irembo	V_GS= 0V, V._DS= 0V, F = 1MHz		-	1.5	-	W
C_gutanga	Ubushobozi bwinjiza	V_GS= 0V, V_DS= 30V, F = 1.0MHz Ω		-	1340	-	pF
C_oss	Ubushobozi bwo gusohoka			-	270	-
C_rss	Hindura Ubushobozi bwo Kwimura			-	40	-
td (ON)	Gufungura igihe cyo gutinda	VDD = 30V, IDS = 1A, VGEN = 10V, RG = 6Ω.		-	15	-	ns
t_r	Gufungura igihe cyo kuzamuka			-	6	-
td (OFF)	Kuzimya igihe cyo gutinda			-	33	-
t_f	Kuzimya Igihe cyo Kugwa			-	30	-
Ibiranga Irembo Ibiranga ^3,4
Q_g	Amafaranga yose yishyurwa	V_DS= 30V, V_GS= 4.5V, I._DS= 20A		-	13	-	nC
Q_g	Amafaranga yose yishyurwa	V_DS= 30V, V._GS= 10V, I_DS= 20A		-	27	-
Q_gth	Irembo ry'Irembo			-	4.1	-
Q_gs	Irembo-Inkomoko			-	5	-
Q_gd	Amafaranga yishyurwa			-	4.2	-