WSD6040DN56 N-umuyoboro 60V 36A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD6040DN56 N-umuyoboro 60V 36A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD6040DN56

BVDSS :60V

ID :36A

RDSON :14mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD6040DN56 MOSFET ni 60V, ikigezweho ni 36A, kurwanya ni 14mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, moteri MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

AOS MOSFET AON6264C, AON6264E, AON6266E, AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDS

Umuyoboro-Inkomoko ya voltage

60

V

VGS

Irembo-Inkomoko y'umuvuduko

± 20

V

ID

Imiyoboro ikomeza TC = 25 ° C.

36

A

TC = 100 ° C.

22

ID

Imiyoboro ikomeza TA = 25 ° C.

8.4

A

TA = 100 ° C.

6.8

IDMa

Gusunika Umuyoboro TC = 25 ° C.

140

A

PD

Ikwirakwizwa ryinshi ryingufu TC = 25 ° C.

37.8

W

TC = 100 ° C.

15.1

PD

Ikwirakwizwa ryinshi ryingufu TA = 25 ° C.

2.08

W

TA = 70 ° C.

1.33

IAS c

Avalanche Yubu, pulse imwe

L = 0.5mH

16

A

BYOROSHEc

Ingufu imwe ya Avalanche Ingufu

L = 0.5mH

64

mJ

IS

Diode Gukomeza Imbere Yubu

TC = 25 ° C.

18

A

TJ

Ubushyuhe ntarengwa

150

TSTG

Ububiko Ubushyuhe Urwego

-55 kugeza 150

RθJAb

Ubushyuhe bwo Kurwanya Ubushyuhe Kuri ibidukikije

Leta ihamye

60

/W

RθJC

Ubushyuhe bwo Kurwanya-Guhuza Urubanza

Leta ihamye

3.3

/W

 

Ikimenyetso

Parameter

Ibisabwa

Min.

Ubwoko.

Icyiza.

Igice

Igihagararo        

V (BR) DSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko

VGS = 0V, ID = 250μA

60    

V

IDSS

Irembo rya Zeru Umuyoboro w'amazi

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ= 85 ° C.

   

30

IGSS

Irembo risohoka

VGS = ± 20V, VDS = 0V

    ± 100

nA

Kubiranga        

VGS (TH)

Irembo rya Threshold Umuvuduko

VGS = VDS, IDS = 250µA

1

1.6

2.5

V

RDS (kuri)d

Umuyoboro-Inkomoko Kuri Leta Kurwanya

VGS = 10V, ID = 25A

  14 17.5

VGS = 4.5V, ID = 20A

  19

22

Guhindura        

Qg

Amafaranga yose yishyurwa

VDS = 30V

VGS = 10V

ID = 25A

  42  

nC

Qgs

Irembo-Sour  

6.4

 

nC

Qgd

Amafaranga yishyurwa  

9.6

 

nC

td (kuri)

Gufungura igihe cyo gutinda

VGEN = 10V

VDD = 30V

ID = 1A

RG = 6Ω

RL = 30Ω

  17  

ns

tr

Gufungura igihe cyo kuzamuka  

9

 

ns

td (kuzimya)

Kuzimya igihe cyo gutinda   58  

ns

tf

Kuzimya Igihe cyo Kugwa   14  

ns

Rg

Kurwanya amarembo

VGS = 0V, VDS = 0V, f = 1MHz

 

1.5

 

Ω

Dynamic        

Ciss

Mubushobozi

VGS = 0V

VDS = 30V f = 1MHz

 

2100

 

pF

Coss

Ubushobozi   140  

pF

Crss

Hindura Ubushobozi bwo Kwimura   100  

pF

Imiyoboro-Inkomoko ya Diode Ibiranga na Ratima ntarengwa        

IS

Inkomoko ikomeje

VG = VD = 0V, Imbaraga Zigezweho

   

18

A

ISM

Inkomoko Yasunitswe Kugeza3    

35

A

VSDd

Diode Imbere Umuvuduko

ISD = 20A, VGS = 0V

 

0.8

1.3

V

trr

Guhindura Igihe cyo Kugarura

ISD= 25A, dlSD/ dt = 100A / µs

  27  

ns

Qrr

Amafaranga yo Kwisubiraho   33  

nC


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