WSD30150DN56 N-umuyoboro 30V 150A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD30150DN56 N-umuyoboro 30V 150A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD30150DN56

BVDSS :30V

ID :150A

RDSON :1.8mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD30150DN56 MOSFET ni 30V, ikigezweho ni 150A, kurwanya ni 1.8mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

E-itabi MOSFET, kwishyuza simusiga MOSFET, drone MOSFET, ubuvuzi MOSFET, charger yimodoka MOSFET, abagenzuzi MOSFET, ibicuruzwa bya digitale MOSFET, ibikoresho bito byo murugo MOSFET, ibikoresho bya elegitoroniki MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

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TOSHIBA MOSFET TPH1R43NL.

PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB, PKE24BB.

POTENS Semiconductor MOSFET PDC392X.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDS

Umuyoboro-Inkomoko ya voltage

30

V

VGS

Irembo-SourUmuyoboro

±20

V

ID@TC= 25

Umuyoboro uhoraho, V.GS@ 10V1,7

150

A

ID@TC= 100

Umuyoboro uhoraho, V.GS@ 10V1,7

83

A

IDM

Gusunika Umuyoboro2

200

A

BYOROSHE

Ingufu imwe ya Avalanche Ingufu3

125

mJ

IAS

Ibiza bya Avalanche

50

A

PD@TC= 25

Gukwirakwiza Imbaraga zose4

62.5

W

TSTG

Ububiko Ubushyuhe Urwego

-55 kugeza 150

TJ

Gukoresha Ihuriro Ubushyuhe Urwego

-55 kugeza 150

 

Ikimenyetso

Parameter

Ibisabwa

Min.

Ubwoko.

Icyiza.

Igice

BVDSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko VGS= 0V, I.D= 250uA

30

---

---

V

BVDSS / △ TJ

BVDSSCoefficient yubushyuhe Reba kuri 25, I.D= 1mA

---

0.02

---

V/

RDS (ON)

Imiyoboro ihamye-Inkomoko Kuri-Kurwanya2 VGS= 10V, I.D= 20A

---

1.8

2.4 mΩ
VGS= 4.5V, I.D= 15A  

2.4

3.2

VGS (th)

Irembo rya Threshold Umuvuduko VGS=VDS, I.D= 250uA

1.4

1.7

2.5

V

VGS (th)

VGS (th)Coefficient yubushyuhe

---

-6.1

---

mV /

IDSS

Umuyoboro-Inkomoko yamenetse VDS= 24V, V.GS= 0V, T.J= 25

---

---

1

uA

VDS= 24V, V.GS= 0V, T.J= 55

---

---

5

IGSS

Irembo-Inkomoko Kumeneka VGS=±20V, V.DS= 0V

---

---

±100

nA

gfs

Imbere Transconductance VDS= 5V, I.D= 10A

---

27

---

S

Rg

Kurwanya Irembo VDS= 0V, V.GS= 0V, f = 1MHz

---

0.8

1.5

Ω

Qg

Amafaranga yose yishyurwa (4.5V) VDS= 15V, V.GS= 4.5V, I.D= 30A

---

26

---

nC

Qgs

Irembo-Inkomoko

---

9.5

---

Qgd

Amafaranga yishyurwa

---

11.4

---

Td (kuri)

Gufungura-Gutinda Igihe VDD= 15V, V.GEN= 10V, R.G=6Ω, I.D= 1A, RL = 15Ω.

---

20

---

ns

Tr

Haguruka

---

12

---

Td (kuzimya)

Kuzimya-Gutinda Igihe

---

69

---

Tf

Igihe cyo Kugwa

---

29

---

Cgutanga

Ubushobozi bwinjiza VDS= 15V, V.GS= 0V, f = 1MHz 2560 3200

3850

pF

Coss

Ubushobozi bwo gusohoka

560

680

800

Crss

Hindura Ubushobozi bwo Kwimura

260

320

420


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