WSD100N06GDN56 N-umuyoboro 60V 100A DFN5X6-8 WINSOK MOSFET

ibicuruzwa

WSD100N06GDN56 N-umuyoboro 60V 100A DFN5X6-8 WINSOK MOSFET

ibisobanuro bigufi:

Igice Umubare :WSD100N06GDN56

BVDSS :60V

ID :100A

RDSON :3mΩ 

Umuyoboro :Umuyoboro

Amapaki :DFN5X6-8


Ibicuruzwa birambuye

Gusaba

Ibicuruzwa

WINSOK MOSFET yibicuruzwa

Umuvuduko wa WSD100N06GDN56 MOSFET ni 60V, ikigezweho ni 100A, kurwanya ni 3mΩ, umuyoboro ni N-umuyoboro, naho paki ni DFN5X6-8.

WINSOK MOSFET ahantu hasabwa

Amashanyarazi yubuvuzi atanga MOSFET, PDs MOSFET, drone MOSFET, itabi rya elegitoronike MOSFET, ibikoresho bikomeye MOSFET, nibikoresho byamashanyarazi MOSFET.

WINSOK MOSFET ihuye nindi mibare yibikoresho

AOS MOSFET AON6264C, AON6264E, AON6266E, AONS6662.STMicroelectronics MOSFET STL13N6F7, STL14N6F7.

Ibipimo byinshi

Ikimenyetso

Parameter

Urutonde

Ibice

VDS

Umuyoboro-Inkomoko ya voltage

60

V

VGS

Irembo-Inkomoko y'umuvuduko

± 20

V

ID1,6

Imiyoboro ikomeza TC = 25 ° C.

100

A

TC = 100 ° C.

65

IDM2

Gusunika Umuyoboro TC = 25 ° C.

240

A

PD

Ikwirakwizwa ryinshi ryingufu TC = 25 ° C.

83

W

TC = 100 ° C.

50

IAS

Avalanche Yubu, pulse imwe

45

A

BYOROSHE3

Ingufu imwe ya Avalanche Ingufu

101

mJ

TJ

Ubushyuhe ntarengwa

150

TSTG

Ububiko Ubushyuhe Urwego

-55 kugeza 150

RθJA1

Ubushyuhe bwo Kurwanya Ubushyuhe Kuri ibidukikije

Leta ihamye

55

/W

RθJC1

Ubushyuhe bwo Kurwanya-Guhuza Urubanza

Leta ihamye

1.5

/W

 

Ikimenyetso

Parameter

Ibisabwa

Min.

Ubwoko.

Icyiza.

Igice

Igihagararo        

V (BR) DSS

Umuyoboro-Inkomoko Kumeneka Umuvuduko

VGS = 0V, ID = 250μA

60    

V

IDSS

Irembo rya Zeru Umuyoboro w'amazi

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ= 85 ° C.

   

30

IGSS

Irembo risohoka

VGS = ± 20V, VDS = 0V

    ± 100

nA

Kubiranga        

VGS (TH)

Irembo rya Threshold Umuvuduko

VGS = VDS, IDS = 250µA

1.2

1.8

2.5

V

RDS (kuri)2

Umuyoboro-Inkomoko Kuri Leta Kurwanya

VGS = 10V, ID = 20A

 

3.0

3.6

VGS = 4.5V, ID = 15A

 

4.4

5.4

Guhindura        

Qg

Amafaranga yose yishyurwa

VDS = 30V

VGS = 10V

ID = 20A

  58  

nC

Qgs

Irembo-Sour   16  

nC

Qgd

Amafaranga yishyurwa  

4.0

 

nC

td (kuri)

Gufungura igihe cyo gutinda

VGEN = 10V

VDD = 30V

ID = 20A

RG = Ω

  18  

ns

tr

Gufungura igihe cyo kuzamuka  

8

 

ns

td (kuzimya)

Kuzimya igihe cyo gutinda   50  

ns

tf

Kuzimya Igihe cyo Kugwa   11  

ns

Rg

Kurwanya amarembo

VGS = 0V, VDS = 0V, f = 1MHz

 

0.7

 

Ω

Dynamic        

Ciss

Mubushobozi

VGS = 0V

VDS = 30V f = 1MHz

 

3458

 

pF

Coss

Ubushobozi   1522  

pF

Crss

Hindura Ubushobozi bwo Kwimura   22  

pF

Imiyoboro-Inkomoko ya Diode Ibiranga na Ratima ntarengwa        

IS1,5

Inkomoko ikomeje

VG = VD = 0V, Imbaraga Zigezweho

   

55

A

ISM

Inkomoko Yasunitswe Kugeza3     240

A

VSD2

Diode Imbere Umuvuduko

ISD = 1A, VGS = 0V

 

0.8

1.3

V

trr

Guhindura Igihe cyo Kugarura

ISD= 20A, dlSD/ dt = 100A / µs

  27  

ns

Qrr

Amafaranga yo Kwisubiraho   33  

nC


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