Icyuma-oxyde-semiconductor umurima-ngaruka-transistor (MOSFET, MOS-FET, cyangwa MOS FET) ni ubwoko bwa transistor-yumurima (FET), bikunze guhimbwa na okiside igenzurwa na silikoni.Ifite irembo ryiziritse, voltage igena imikorere yikintu.
Ikintu nyamukuru kiranga ni uko hari dioxyde de silicon iringaniza hagati y irembo ryicyuma numuyoboro, bityo ikaba ifite imbaraga zo kwinjiza cyane (kugeza 1015Ω).Igabanijemo kandi umuyoboro wa N-umuyoboro na P-umuyoboro.Mubisanzwe substrate (substrate) nisoko S ihujwe hamwe.
Ukurikije uburyo butandukanye bwo gutwara, MOSFETs igabanijwe muburyo bwo kuzamura no kugabanuka.
Ubwoko bwitwa kuzamura ubwoko busobanura: iyo VGS = 0, umuyoboro uba waciwe.Nyuma yo kongeramo VGS ikwiye, abatwara benshi bakururwa n irembo, bityo "bakazamura" abatwara kariya gace bagakora umuyoboro uyobora..
Uburyo bwa depletion bivuze ko iyo VGS = 0, hashyizweho umuyoboro.Iyo VGS iboneye yongeyeho, abatwara ibintu benshi barashobora gusohoka mumuyoboro, bityo "kugabanuka" abatwara no kuzimya umuyoboro.
Tandukanya impamvu: Kurwanya JFET kwinjiza birenze 100MΩ, kandi transconductance ni ndende cyane, iyo irembo riyobowe, umurima wa magnetiki wo mu nzu biroroshye cyane kumenya ibimenyetso bya voltage ikora kumarembo, kuburyo umuyoboro ugenda kuba hejuru, cyangwa ukunda kuba kuri-off.Niba umubiri wa induction voltage uhita wongerwa kumarembo, kubera ko urufunguzo rwa electromagnetic rwibanze rukomeye, ibintu byavuzwe haruguru bizaba bikomeye.Niba urushinge rwa metero runyerera cyane ibumoso, bivuze ko umuyoboro ukunda kuba hejuru, imiyoboro y'amazi ya RDS iraguka, kandi umubare w'amazi atemba ugabanuka IDS.Ibinyuranye, urushinge rwa metero runyerera cyane iburyo, byerekana ko umuyoboro ukunda guhagarara, RDS iramanuka, IDS ikazamuka.Nyamara, icyerekezo nyacyo aho urushinge rwa metero rwerekejwe rugomba guterwa ninkingi nziza kandi mbi ya voltage yatewe (icyerekezo cyiza gikora voltage cyangwa icyerekezo gikora cyumubyigano) hamwe nigikorwa cyo hagati cyumuyoboro.
WINSOK DFN3x3 MOSFET
Dufashe umuyoboro wa N nkurugero, bikozwe kumurongo wa P-silicon substrate hamwe nibice bibiri bikwirakwizwa cyane byo gukwirakwiza uturere N + hamwe no gukwirakwiza uturere twa N +, hanyuma isoko ya electrode S hamwe na electrode D ikuramo.Inkomoko na substrate byahujwe imbere, kandi burigihe bigumana ubushobozi bumwe.Iyo imiyoboro ihujwe na terefone nziza yo gutanga amashanyarazi kandi isoko ihujwe na terefone itari nziza yo gutanga amashanyarazi na VGS = 0, umuyoboro uhuza (ni ukuvuga imiyoboro y'amazi) ID = 0.Mugihe VGS yiyongera gahoro gahoro, ikururwa numuyoboro mwiza wamarembo, abatwara abantu bake batwarwa nabi baterwa hagati yakarere kombi gakwirakwizwa, bigakora umuyoboro wa N uva mumazi ugana isoko.Iyo VGS iruta izimya voltage VTN ya tube (muri rusange nka + 2V), umuyoboro wa N-umuyoboro utangira gukora, ugakora indangamuntu ya drain.
VMOSFET (VMOSFET), izina ryayo ryuzuye ni V-groove MOSFET.Nibikoresho bishya byatejwe imbere cyane, ibikoresho byo guhinduranya ingufu nyuma ya MOSFET.Ntabwo iragwa gusa ibyinjira byinjira cyane muri MOSFET (≥108W), ariko kandi na moteri ntoya yo gutwara (hafi 0.1μA).Ifite kandi ibintu biranga ibintu byiza cyane nko kwihanganira ingufu za voltage (kugeza 1200V), imiyoboro minini ikora (1.5A ~ 100A), ingufu zisohoka cyane (1 ~ 250W), umurongo mwiza wa transconductance, hamwe n'umuvuduko wihuse.Nukuri kuko ihuza ibyiza bya vacuum na tristoriste yamashanyarazi, irakoreshwa cyane mumashanyarazi ya voltage (amplification amplification ishobora kugera inshuro ibihumbi), ibyuma byongerera ingufu, guhinduranya amashanyarazi na inverter.
Nkuko twese tubizi, irembo, isoko namazi ya MOSFET gakondo biri hafi yindege imwe itambitse kuri chip, kandi imikorere yayo ahanini itemba yerekeza kuri horizontal.Umuyoboro wa VMOS uratandukanye.Ifite ibintu bibiri byingenzi byubatswe: icya mbere, irembo ryicyuma ryemera imiterere ya V.icya kabiri, ifite vertical vertical.Kubera ko imiyoboro ikururwa inyuma ya chip, indangamuntu ntigenda itambitse kuruhande rwa chip, ahubwo itangirira mukarere ka N + gakabije cyane (isoko S) hanyuma kakinjira mukarere ka N-drift gahoro gahoro kanyuze kumuyoboro wa P.Hanyuma, igera ihagaritse kumanuka kugirango ikure D. Kuberako urujya n'uruza rw'ibice byiyongera, imigezi minini irashobora kunyuramo.Kubera ko hari dioxyde de silicon iringaniza hagati y irembo na chip, iracyari irembo ryiziritse MOSFET.
Ibyiza byo gukoresha:
MOSFET nikintu kigenzurwa na voltage, mugihe transistor nikintu kiyobowe nubu.
MOSFETs igomba gukoreshwa mugihe gito gusa cyumuvuduko wemerewe gukurwa mubimenyetso byerekana ibimenyetso;transistors igomba gukoreshwa mugihe ibimenyetso bya voltage ari bike kandi nibindi byinshi byemewe gukururwa biva mubimenyetso.MOSFET ikoresha ubwikorezi bwinshi kugirango ikore amashanyarazi, bityo yitwa igikoresho cya unipolar, mugihe transistor ikoresha abatwara benshi hamwe nabatwara bake kugirango bakore amashanyarazi, bityo yitwa igikoresho cya bipolar.
Inkomoko n'amazi ya MOSFETs zimwe zishobora gukoreshwa muburyo bumwe, kandi voltage yumuryango irashobora kuba nziza cyangwa mibi, bigatuma ihinduka kurusha triode.
MOSFET irashobora gukora mugihe gito cyane kandi cyumuvuduko muke cyane, kandi uburyo bwo gukora burashobora guhuza byoroshye MOSFETs nyinshi kuri chip ya silicon.Kubwibyo, MOSFET yakoreshejwe cyane muminini minini ihuriweho.
Olueky SOT-23N MOSFET
Porogaramu ijyanye na MOSFET na transistor
1. Inkomoko s, irembo g, na drain d ya MOSFET ihuye na emitter e, base b, hamwe na c c tristoriste.Imikorere yabo irasa.
2. MOSFET ni igikoresho kigenzurwa na voltage igezweho, iD iyobowe na vGS, kandi coefficient ya amplification ya gm muri rusange ni nto, bityo ubushobozi bwa amplification ya MOSFET burakennye;transistor nigikoresho kiyobowe nubu, kandi iC iyobowe na iB (cyangwa iE).
3. Irembo rya MOSFET rishushanya hafi ntagihe (ig »0);mugihe ishingiro rya tristoriste buri gihe rishushanya icyerekezo runaka mugihe transistor ikora.Kubwibyo, irembo ryinjiza irwanya MOSFET irarenze iyinjira ryinjira muri transistor.
4. MOSFET igizwe ninzitizi nyinshi zigira uruhare mu kuyobora;transistors ifite abatwara babiri, multicarrier hamwe nabatwara bake, bagize uruhare mugutwara.Ubwinshi bwabatwara bake bugira ingaruka cyane kubintu nkubushyuhe nimirasire.Kubwibyo, MOSFETs ifite ubushyuhe bwiza kandi irwanya imirasire ikomeye kuruta transistor.MOSFETS igomba gukoreshwa aho ibidukikije (ubushyuhe, nibindi) bitandukanye cyane.
5. Iyo inkomoko yinkomoko hamwe na substrate ya MOSFET ihujwe hamwe, isoko namazi birashobora gukoreshwa muburyo bumwe, kandi ibiranga bigahinduka bike;mugihe iyo uwakusanyije hamwe na emitter ya triode ikoreshwa muburyo bumwe, ibiranga biratandukanye cyane.Value agaciro kazagabanuka cyane.
6. Coefficient y urusaku rwa MOSFET ni nto cyane.MOSFET igomba gukoreshwa uko bishoboka kwose murwego rwo kwinjiza amajwi make yongerera imbaraga urusaku rwumuzunguruko hamwe nizunguruka bisaba ibimenyetso byinshi-byerekana urusaku.
7. MOSFET na transistor byombi birashobora gukora imiyoboro itandukanye ya amplifier hamwe no guhinduranya imirongo, ariko iyambere ifite uburyo bworoshye bwo gukora kandi ifite ibyiza byo gukoresha ingufu nke, guhagarara neza kwamashyanyarazi, hamwe n’umurongo mugari w’amashanyarazi.Kubwibyo, ikoreshwa cyane murwego runini kandi runini cyane rwuzuzanya.
8. Transistor ifite nini nini-yo-kurwanya, mugihe MOSFET ifite bike-birwanya, m hundred magana make gusa.Mubikoresho byamashanyarazi bigezweho, MOSFETs isanzwe ikoreshwa nka switch, kandi imikorere yabyo iri hejuru.
WINSOK SOT-323 enapsulation MOSFET
MOSFET na Bipolar Transistor
MOSFET ni igikoresho kigenzurwa na voltage, kandi irembo ntirishobora gufata amashanyarazi, mugihe transistor nigikoresho kigenzurwa nubu, kandi shingiro igomba gufata umuyoboro runaka.Kubwibyo, mugihe ibipimo byagenwe byerekana ibimenyetso ari bito cyane, MOSFET igomba gukoreshwa.
MOSFET nuyobora ibintu byinshi, mugihe abatwara transistor bombi bitabira kuyobora.Kubera ko ubwinshi bwabatwara abantu bumva neza imiterere yubushyuhe nkubushyuhe nimirasire, MOSFET irakwiriye mubihe ibidukikije bihinduka cyane.
Usibye gukoreshwa nkibikoresho byongera imbaraga hamwe na switch ishobora kugenzurwa nka transistor, MOSFETs irashobora kandi gukoreshwa nka voltage igenzurwa nimpinduka zumurongo urwanya.
Inkomoko n'amazi ya MOSFET birasa muburyo kandi birashobora gukoreshwa muburyo bumwe.Irembo-isoko ya voltage yuburyo bwa depletion MOSFET irashobora kuba nziza cyangwa mbi.Kubwibyo, gukoresha MOSFETs biroroshye guhinduka kuruta transistors.
Igihe cyo kohereza: Ukwakira-13-2023
